2021
DOI: 10.1007/s11082-021-02771-9
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Optimization by simulation for photovoltaic applications of the quaternary semiconductor InGaAsP epitaxed on InP substrate

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Cited by 9 publications
(1 citation statement)
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“…With and translate the displacement of the valence band by the effect of the deformation due to shear [ 27 ]. and represent the energy displacements of the valence band and conduction band due to hydrostatic deformation, respectively [ 38 ].…”
Section: Theoretical Approachmentioning
confidence: 99%
“…With and translate the displacement of the valence band by the effect of the deformation due to shear [ 27 ]. and represent the energy displacements of the valence band and conduction band due to hydrostatic deformation, respectively [ 38 ].…”
Section: Theoretical Approachmentioning
confidence: 99%