Optimisation of high power AlGaInP laser diodes for optical storage applications

Elliott, Stella N.; Berry, G.; Smowton, Peter M.

doi:10.1049/ip-opt:20060050

Cited by 5 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The total core width was 0.23 m. The cladding region consisted of lattice matched AlGaInP ͑Al fraction 0.7͒ with 0.25 m AlGaInP ͑Al fraction 0.5͒ mode expansion layers inserted in the cladding on each side. 13 Etch stop GaInP layers were grown on both sides ͑to preserve the symmetry of the structure͒ about 0.4 m from the center of the structure. The cladding layers were doped with Si ͑n͒ and Mg ͑p͒.…”

Section: Sample and Experimental Detailsmentioning

confidence: 99%

Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes

Elliott

Smowton

Ziegler

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

We have observed the changing light intensity during catastrophic optical mirror damage (COMD) on the timescale of tens of nanoseconds using red-emitting AlGaInP quantum well based laser diodes. Using as-cleaved facets and this material system, which is susceptible to COMD, we recorded the drop in light intensity and the area of damage to the facet, as a function of current, for single, high current pulses. We found that in the current range up to 40 A, the total COMD process up to the drop of light intensity to nonlasing levels takes place on a timescale of hundreds of nanoseconds, approaching a limiting value of 200 ns, and that the measured area of facet damage showed a clear increase with drive current. Using a straightforward thermal model, we propose an explanation for the limiting time at high currents and the relationship between the time to COMD and the area of damaged facet material.

show abstract

Section: Sample and Experimental Detailsmentioning

confidence: 99%

Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes

Elliott

Smowton

Ziegler

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Many types of designs for lasers with narrow vertical far-fields have been investigated, including large and super large optical cavity ([S]LOC) [3], photonic bandgap crystal (PBC) structures [4] and designs with extra layers in the optical waveguide [5][6][7][8]. Good control of the far-field divergence is achieved in all these designs, with vertical divergence reduced from a typical 35°o r more in earlier designs, to 8-18°in structures designed for control of the vertical far-field.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, we designate this as Design A. Full details are given of the structure in [6] and the waveguide is described below. We now consider the sensitivity of our design to unintended variations in cladding layer thickness and composition during growth.…”

Section: Introductionmentioning

confidence: 99%

Manufacturing‐tolerant compact red‐emitting laser diode designs for next generation applications

Elliott

Smowton

2015

IET Optoelectronics

View full text Add to dashboard Cite

Quantum well laser diodes with low far-field divergence remain a requirement for many applications such as optical interconnects and data networks, pump sources and next generation holographic red-green-blue displays requiring compact, high power, visible light sources with high spatial and spectral coherence. Many designs exist, but the structure must be easy to grow reproducibly, which has commercial advantages. The authors' low far-field divergence design widens the vertical mode in such a way as to decrease the far-field divergence without significantly reducing the confinement factor, thus keeping threshold current lower. In this study, the authors calculate the sensitivity of their design, which has high refractive index mode expansion layers inserted in the cladding, to unintentional variations in layer thickness and composition during growth. They obtain consistency in measured far-fields for three wafers grown over an interval of a year, with a full-width-half-maximum vertical far-field divergence of 17°for a narrow design (Design A) and just under 13°for a very narrow design (Design B). They have demonstrated a useful, reproducible design, adding to the range of versatile semiconductor lasers available for every application.

show abstract

“…Compared to devices with wavelengths X650 nm, where promising results have been achieved recently [1][2][3][4], the further reduced barrier heights for electrons and holes and the corresponding high leakage currents are a major challenge for the design of devices in the 63x-64x nm wavelength range [5][6][7]. These lasers operate at the physical limits and suffer from low efficiencies and a high temperature sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes

Kaspari

Zorn

Weyers

et al. 2008

Journal of Crystal Growth

View full text Add to dashboard Cite

Optimisation of high power AlGaInP laser diodes for optical storage applications

Cited by 5 publications

References 8 publications

Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes

Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes

Manufacturing‐tolerant compact red‐emitting laser diode designs for next generation applications

Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes

Contact Info

Product

Resources

About