Optimisation of gate circuit layout to suppress power/drive interaction

Akhbari, Mahdi; Piette, N.; Schanen, Jean‐Luc

doi:10.1109/ias.1998.730281

Cited by 13 publications

(4 citation statements)

References 3 publications

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“…Due to the common impedance coupling between power and drive conductors and the emitter stray inductances, a parasitic voltage is induced in the gate circuit during switching. This phenomenon leads to an increase of switching losses transitions, is at the origin of EMC problems and it requires to over rate power devices [15].…”

Section: A Magnetic Power/drive Interactionsmentioning

confidence: 99%

“…Figure 15: Measurement waveforms for a planar module For the planar module, interactions between drive circuit and power circuit are clearly demonstrated. That's why a special care and an optimization of the planar power module layout with the minimization of the power/drive circuit coupling is always necessary and has been studied in [15]. With the Chip On Chip structure, a natural decoupling of the power circuit and the control circuit is achieved, simplifying the design while increasing the quality of the module.…”

Section: Vg Lementioning

confidence: 99%

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A Busbar Like Power Module Based On 3D Chip On Chip Hybrid Integration

Vagnon

Jeannin

Avenas

et al. 2009

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition

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The paper focuses on a new generation of power modules, trying to optimize the tradeoff between thermal and EMI managements. At the same time, the packaging approach is considered in order to simplify the implementation of the power dies while improving the reliability of the structure. The approach considers the hybrid integration of the power dies, one on top of the other into a 3D Chip On Chip configuration. Thanks to this structure, the power dies can be directly inserted within electrical plates, the whole structure emulating a busbar like power module. The paper presents the characteristics and the benefits of the approach. Then, it focuses on the practical characterization of two prototypes: a buck converter structure and a full bridge, single phase diode rectifier. Both of them are based on double sided thermal cooling and electro-thermal contacts are obtained by pressure. The prototypes exhibit great performances while offering really reduced parasitic and EMI coupling.

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Section: A Magnetic Power/drive Interactionsmentioning

confidence: 99%

Section: Vg Lementioning

confidence: 99%

A Busbar Like Power Module Based On 3D Chip On Chip Hybrid Integration

Vagnon

Jeannin

Avenas

et al. 2009

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition

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“…The fitness of a layout can only be determined based on the overall evaluation of the parasitic parameters. Literatures [1][2][3][4][5][6][7][8][9] also show that only manual layout designs for power module have been demonstrated so far. The main dissatisfactions with manual layout design are the design speed and the limited choice of candidates.…”

Section: Introductionmentioning

confidence: 98%

Automatic layout design for power module

Ning

Wang

Ngo

2010

2010 IEEE Energy Conversion Congress and Exposition

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The layout of power modules is one of the key points in power module design, especially for high power densities, where couplings are increased. In this paper, along with the design example, an automatic design processes by using genetic algorithm are presented. Some practical considerations and implementations are introduced in the optimization of the layout design of the module. Abstract -Layout, genetic algorithms, parasitic parameters

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“…Due to this amplification, the RF oscillations can become self-sustaining thus further reducing the reliability of the converter. Methods for minimizing RF oscillations of IGBT were presented in literature based on a careful design of PCB layout and gate driver [6]. Moreover, the IGBT amplification phenomena can become relevant if the driver circuit generates high frequency conducted noise components, that can be transferred to the power stage and amplified, generating very high EMI levels.…”

Section: Introductionmentioning

confidence: 99%

High Frequency Behavior of High Power IGBT Modules

Abbate¹,

Folco²

2015

ujeee

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Sharp voltage gradients act as a stimulus for high power IGBT modules, which can exhibit a potentially instable high frequency behaviour. In effect, they can act as a radio frequency (RF) amplifier and under certain operating conditions the interaction between the device and the control or the external circuit can cause self-sustaining oscillations or the enhancement of the unevenness in current distribution inside a power module and that can have a significant impact on the reliability of the power converter. Moreover, this RF amplification worsen the generated EMI (Electro Magnetic Interference). This paper presents an extensive experimental investigation about the high frequency behaviour of IGBT high power modules. Measurements were performed by an original experimental set-up that was specifically conceived and constructed. Data were analysed with the help of a theoretical small signal model which was able to describe RF behaviour of high power IGBT modules.

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Optimisation of gate circuit layout to suppress power/drive interaction

Cited by 13 publications

References 3 publications

A Busbar Like Power Module Based On 3D Chip On Chip Hybrid Integration

A Busbar Like Power Module Based On 3D Chip On Chip Hybrid Integration

Automatic layout design for power module

High Frequency Behavior of High Power IGBT Modules

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