2004
DOI: 10.1049/ip-opt:20040288
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Optimisation of 10 Gbit/s InGaAsP electroabsorption modulator operating at high temperature

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Cited by 6 publications
(5 citation statements)
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“…However, it is worth to underline that in the literature it is possible to find several micro-XANES studies [96,[412][413][414][415][416], where only few tens of eV are scanned across the edge, whereas papers reporting micro-EXAFS data, requiring an energy scan of several hundred of eV, are much more rare [123,[417][418][419][420][421]. An interesting example of micro-EXAFS investigation is represented by the study of MQWs in the electroabsorption modulated laser (EML) [422,423]. Indeed, nowadays advanced optoelectronic devices often require the integration of two different functions in the same chip: excellent results in the development of monolithic integration have been reached with the Selective Area Growth (SAG) technique [424,425].…”
Section: Mqw For Optoelectronic Devices Investigated By Micro-xasmentioning
confidence: 99%
“…However, it is worth to underline that in the literature it is possible to find several micro-XANES studies [96,[412][413][414][415][416], where only few tens of eV are scanned across the edge, whereas papers reporting micro-EXAFS data, requiring an energy scan of several hundred of eV, are much more rare [123,[417][418][419][420][421]. An interesting example of micro-EXAFS investigation is represented by the study of MQWs in the electroabsorption modulated laser (EML) [422,423]. Indeed, nowadays advanced optoelectronic devices often require the integration of two different functions in the same chip: excellent results in the development of monolithic integration have been reached with the Selective Area Growth (SAG) technique [424,425].…”
Section: Mqw For Optoelectronic Devices Investigated By Micro-xasmentioning
confidence: 99%
“…In particular, synchrotron radiation micro-/nano-beams can also be successfully employed to study devices based on nanostructured inorganic materials. An interesting example is represented by the electroabsorption modulated laser (EML) [121,122]. Indeed, nowadays heterostructures based on quaternary III-V semiconductor alloys are widely used in optical communication systems.…”
Section: Applications Of X-ray Micro Beams: Electroabsorption Modulatmentioning
confidence: 99%
“…One of the most promising applications of this technique are electroabsorption modulated lasers (EML)29–31 obtained by monolithic integration of an electroabsorption modulator (EAM) with a distributed feedback laser (DFB). They are particularly interesting for long‐distance (up to 100 km) communications at high frequency (10 Gb s −1 ); in fact, a directly modulated DFB laser is limited by its positive chirp 32.…”
Section: Introductionmentioning
confidence: 99%