Optimisation and scaling of interfacial GeO&lt;inf&gt;2&lt;/inf&gt; layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO&lt;inf&gt;2&lt;/inf&gt;

Murad, Shahjahan N.; McNeill, David; Mitchell, S.J.N.; Armstrong, B.M.; Modreanu, M.; Hughes, Greg; Chellappan, Rajesh Kumar

doi:10.1109/isdrs.2011.6135337

Cited by 4 publications

(4 citation statements)

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“…As shown in Figure 4a, the C−V characteristics of both ALD GeO 2 films show similar and typical behavior of an MOS capacitor with p-type Si substrate. The dielectric constants extracted from the maximum capacitance value are 5.94 for Ge(OnBu) 4 and 5.77 for Ge(NMe 2 ) 4 , which is a range similar to those reported for GeO 2 films, 5.2−5.8 42 and about 6. 8 In addition, although the hysteresis properties are similar, the interface trap densities of both Ge(OnBu) 4 and Ge(NMe 2 ) 4 show little difference and are comparable to commonly used gate dielectrics.…”

Section: ■ Results and Discussionsupporting

confidence: 83%

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO₂

Yoon¹,

Oh²,

Lee³

et al. 2018

Chem. Mater.

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We have investigated the atomic layer deposition (ALD) of GeO2 thin films that dissolve in water rapidly and have excellent electrical properties for use in memory devices. The growth characteristics based on surface reactions during the ALD process are discussed by correlation with experimental results and atomistic theoretical calculation. Compared to sputtered GeO2 films, the ALD-grown GeO2 is perfect, pure, and water-soluble at room temperature and has better electrical properties for use as the dielectric layer in memory devices. The superior film properties of ALD GeO2 are attributed to the higher film density, high purity, low roughness, and highly stoichiometric film composition. Finally, we demonstrate the fabrication of charge-trapping memory (CTM) devices with ALD GeO2, and that the electrical information stored in the CTM can be eliminated immediately by exposure to one droplet of water at room temperature. Thus, ALD GeO2 could find widespread application in the fabrication of secure memory devices.

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Section: ■ Results and Discussionsupporting

confidence: 83%

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO₂

Yoon¹,

Oh²,

Lee³

et al. 2018

Chem. Mater.

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“…The C-V curves of the ALD-grown GeO 2 show typical behavior of dielectric materials on p-Si substrate with small hysteresis (;100 mV) and interface state density (D it ) (1.6 Â 10 12 and 8.3 Â 10 11 for ALD GeO 2 by Ge(NMe 2 ) 4 and Ge(OnBu) 4 , respectively). The calculated dielectric constants of ALD GeO 2 by Ge(NMe 2 ) 4 and Ge(OnBu) 4 are 5.77 and 5.94, respectively, and these are well-matched with those that are previously reported for GeO 2 films [114]. On the other hand, in the case of the C-V curve of sputtered GeO 2 , the accumulated capacitance is smaller than that of ALD GeO 2 (k ; 1.05), and a large hysteresis (;2 V) and D it (;9.2 Â 10 12 ) are also observed.…”

Section: Germanium Oxidesupporting

confidence: 88%

Atomic layer deposition for nonconventional nanomaterials and their applications

Nam

2019

J. Mater. Res.

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“…In a similar way, the interpolated electron affinity is x ZGO = 3.11 eV using an electron affinity of 2.5 eV for germanium oxide [46] and 4.1 eV for zinc oxide [8]. Finally, the permittivity is calculated to a value of 6.18 from the permittivity of 4.5 of germanium oxide [47] and 8.91 of the zinc oxide [22]. It is well known that the bandgap and electron affinity dependence for ternary compounds follow a second order polynomial equation with a bowing parameter, as for instance for the ZnO/ZnS or ZnO/ZnSe systems [48].…”

Section: Physical Parameters Of the Buffer Layermentioning

confidence: 99%

Numerical investigations of the impact of buffer germanium composition and low cost fabrication of Cu₂O on AZO/ZnGeO/Cu₂O solar cell performances

et al. 2021

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Numerical simulations of AZO/Zn1−xGexO/Cu2O solar cell are performed in order to model for the first time the impact of the germanium composition of the ZnGeO buffer layer on the photovoltaic conversion efficiency. The physical parameters of the model are chosen with special care to match literature experimental measurements or are interpolated using the values from binary metal oxides in the case of the new Zn1−xGexO compound. The solar cell model accuracy is then confirmed thanks to the comparison of its predictions with measurements from the literature that were done on experimental devices obtained by thermal oxidation. This validation of the AZO/Zn1−xGexO/Cu2O model then allows to study the impact of the use of the low cost, environmental friendly and industrially compatible spray pyrolysis process on the solar cell efficiency. To that aim, the Cu2O absorber layer parameters are adjusted to typical values obtained by the spray pyrolysis process by selecting state of the art experimental data. The analysis of the impact of the absorber layer thickness, the carrier mobility, the defect and doping concentration on the solar cell performances allows to draw guidelines for ZnGeO/Cu2O thin film photovoltaic device realization through spray pyrolysis.

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Optimisation and scaling of interfacial GeO<inf>2</inf> layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO<inf>2</inf>

Cited by 4 publications

References 2 publications

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO₂

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO₂

Atomic layer deposition for nonconventional nanomaterials and their applications

Numerical investigations of the impact of buffer germanium composition and low cost fabrication of Cu₂O on AZO/ZnGeO/Cu₂O solar cell performances

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Optimisation and scaling of interfacial GeO<inf>2</inf> layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO<inf>2</inf>

Cited by 4 publications

References 2 publications

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO2

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO2

Atomic layer deposition for nonconventional nanomaterials and their applications

Numerical investigations of the impact of buffer germanium composition and low cost fabrication of Cu2O on AZO/ZnGeO/Cu2O solar cell performances

Contact Info

Product

Resources

About

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO₂

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO₂

Numerical investigations of the impact of buffer germanium composition and low cost fabrication of Cu₂O on AZO/ZnGeO/Cu₂O solar cell performances