Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2

Murad, Shahjahan N.; Baine, Paul; McNeill, David; Mitchell, S.J.N.; Armstrong, B.M.; Modreanu, M.; Hughes, Greg; Chellappan, Rajesh Kumar

doi:10.1016/j.sse.2012.05.048

Cited by 39 publications

(16 citation statements)

References 19 publications

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“…For example, if a layer of GeO 2 were present, it would result in a slightly lower capacitance in accumulation because its dielectric constant is 4.5 compared to approximately 9 for alumina. 33 It is also possible that these surface treatments result in bulk Al 2 O 3 layers that differ in the amount of defects even though the physical thicknesses of the Al 2 O 3 layer on each of these surfaces measured by ellipsometry were nearly equal at approximately 10 nm (supplementary material, Fig. 3).…”

Section: Discussionmentioning

confidence: 99%

Reaction of aqueous ammonium sulfide on SiGe 25%

Heslop

Peckler

Muscat

2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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SiGe 25% substrates were treated with aqueous solutions of ammonium sulfide with and without added acid to understand the adsorption of sulfur on the surface. X-ray photoelectron spectroscopy showed no sulfide layer was deposited from aqueous (NH 4 ) 2 S alone and instead both Si and Ge oxides formed during immersion in the sulfur solution. The addition of hydrofluoric and hydrochloric acids dropped the pH from 10 to 8 and deposited sulfides, yet increased the oxide coverage on the surface and preferentially formed Ge oxides. The sulfur coverage grew with increasing concentrations of acid in the aqueous (NH 4 ) 2 S. The simultaneous deposition of O and S is suspected to be the result of oxidized sulfur species in solution. Metal-insulator-semiconductor capacitor (MISCAP) devices were fabricated to test the electrical consequences of aqueous ammonium sulfide wet chemistries on SiGe. MISCAPs treated with acidic ammonium sulfide solutions contained fewer interface defects in the valence band region. The defect density (D it ) was on the order of 10 þ12 cm -2 eV À1. The flat band voltage shift was lower after the acidic ammonium sulfide treatment, despite the presence of surface oxides. Adsorption of S and potentially O improved the stability of the surface and made it less electrically active.

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Section: Discussionmentioning

confidence: 99%

Reaction of aqueous ammonium sulfide on SiGe 25%

Heslop

Peckler

Muscat

2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…This nanomaterial has a refractive index and a linear coefficient of thermal Submicron or nano-particles. On the other hand germania nanostructures have novel physical and chemical properties that differed from those of the corresponding bulk materials [1][2][3]. Glass based on germanium oxide is thought to be more refractive than corresponding silicate glass [4].…”

Section: Introductionmentioning

confidence: 99%

Facile synthesis of GeO2 nanostructures and measurement of photocatalytic, photovoltaic and photoluminescence properties

Nejaty-Moghadam

Esmaeili-Bafghi-Karimabad

Gholamrezaei

et al. 2015

J Mater Sci: Mater Electron

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In this work, germanium dioxide nanostructures were prepared by a facile co-precipitation method. In this synthesis approach was used from acetyl acetone as capping agent to get the smallest nanoparticles. Some of effective parameters were optimized to achieve the best morphology of product, such as mole ratio of acetyl acetone, temperature and time. Small germania nanostructures with a size about 70 nm sizes were achieved in this method. Nanostructures were characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared techniques X-ray energy dispersive spectroscopy and ultraviolet spectroscopy (UV-Vis). Various properties such as photoluminescence, photocatalytic and photovoltaic property were studied for as-prepared nanostructures. Results of germania nanostructures show that product revealed a PL band that caused from recombination of electron and hole in nanostructure. On the other hand, these nanostructures show a good photocatalytic behavior for degradation of methyl orange in presence of UV light. Therefore germania nanoparticles applied in photovoltaic measurement.

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“…. Component peaks at 530.8 and 532.4 eV are associated with GeO and GeO 2 species, respectively, whereas the peak at 533.3 eV corresponds to water present in the film after degradation . It is to be mentioned that relative concentrations of GeO and GeO 2 derived from curve‐fitted Ge 2p 3/2 core level spectrum of degraded Ge are 34% and 66%, respectively, whereas they are 35% and 65%, respectively, as evaluated from O 1s core level spectrum.…”

Section: Resultsmentioning

confidence: 98%

A study on degradation of germanium coating on Kapton used for spacecraft sunshield application

Akinlabi

Dey

Sridhara

et al. 2015

Surface & Interface Analysis

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a Sunshield membranes made of germanium-coated black polyimide (GBP) or Kapton are often used on the reflector/transmitter antenna of satellites for thermal control applications. However, the germanium top layer is prone to degrade during ground storage and implementation. Hence, vacuum/inert gas-sealed packaging is required for storing the membranes, followed by a staggered fabrication schedule as the shelf-life of the GBP is identified as only~6 months. In the present study, microstructural, thermo-optical, and electrical properties along with X-ray photoelectron spectroscopy (XPS) studies for evaluating oxidation states of the as-received and degraded GBP films have been investigated thoroughly. The radio frequency (RF) loss behavior of both the films has also been studied for S band (2.5-3.5 GHz), Ku band (10.5-14.5 GHz), and Ka band (30-35 GHz).

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Optimisation and scaling of interfacial GeO2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO2

Cited by 39 publications

References 19 publications

Reaction of aqueous ammonium sulfide on SiGe 25%

Reaction of aqueous ammonium sulfide on SiGe 25%

Facile synthesis of GeO2 nanostructures and measurement of photocatalytic, photovoltaic and photoluminescence properties

A study on degradation of germanium coating on Kapton used for spacecraft sunshield application

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