Optimal noise figure of microwave GaAs MESFET's

Fukui, H.

doi:10.1109/t-ed.1979.19541

Cited by 317 publications

(70 citation statements)

References 9 publications

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“…The parasitic capacitance in the gate region can be minimized by adopting a cavity structure [243] in InAlAs/InGaAs high-electron mobility transistors which will improve the high-frequency and noise characteristics of these devices. Reducing gate and source resistances is also effective in minimizing the NF min [243,251]. Eq.…”

Section: Developments In Indium Phosphide Hemtsmentioning

confidence: 99%

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A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Ajayan

Nirmal

2015

Superlattices and Microstructures

127

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Section: Developments In Indium Phosphide Hemtsmentioning

confidence: 99%

“…Ultralow-noise InP HEMTs have been demonstrated and fabricated for cryogenic temperature operation [244][245][246][247][248][249][250][251]. .…”

Section: Developments In Indium Phosphide Hemtsmentioning

confidence: 99%

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Ajayan

Nirmal

2015

Superlattices and Microstructures

127

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“…Many noise models have been reported in the literature: the wellknown Fukui's model [6], the equivalent noise temperature model by Pospieszalski [7] and the flicker noise model for HEMTs [8]. Many approaches on HEMT's noise parameters characterization ware investigated [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

Djennati

Ghaffour

2017

IJECE

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In this paper, a noise revision of an InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistor (pHEMT) in presented. The noise performances of the device were predicted over a range of frequencies from 1GHz to 100GHz. The minimum noise figure (NFmin), the noise resistance (Rn) and optimum source impedance (Zopt) were extracted using two approaches. A physical model that includes diffusion noise and G-R noise models and an analytical model based on an improved PRC noise model that considers the feedback capacitance Cgd. The two approaches presented matched results allowing a good prediction of the noise behaviour. The pHEMT was used to design a single stage S-band low noise amplifier (LNA). The LNA demonstrated a gain of 12.6dB with a return loss coefficient of 2.6dB at the input and greater than -7dB in the output and an overall noise figure less than 1dB. Keyword:InAlAs INTRODUCTIONThe InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistors (pHEMT) have exhibited excellent performances in terms of noise figure compared to MOSFET devices at RF and microwave fields [1]. In addition, they are mostly used in the design of low noise amplifiers [2-4] and proven to be more advantageous that the AlGaAs/InGaAs pHEMTs [5].Advanced circuit design that uses pHEMT, needs precise and accurate noise models, especially for their application in low noise MMIC. Many noise models have been reported in the literature: the wellknown Fukui's model [6], the equivalent noise temperature model by Pospieszalski [7] and the flicker noise model for HEMTs [8]. Many approaches on HEMT's noise parameters characterization ware investigated [9][10][11].In 1974, R.A. Pucel proposed a charge control based approach for a noise model in FET devices, the model is known as the PRC noise model [12]. Later in 1988, the model was used for HEMT devices in [13] and later improved by Zhi [14] where they included, in the PRC model, the temperature coefficients in order to calculate precise noise parameters for HEMTs.In this paper, we try to predict the noise performances at high frequency of an InAlAs/InGaAs/InP pHEMT by extracting the basic noise parameters using two approaches: a physical modelling and a mathematical modelling. This work is organized as follow: first, we discuss the different sources of noise in the pHEMT devices. Then, we make use of ATLAS from SILVACO TCAD suit, to simulate the noise behavior of a fabricated InAlAs/InGaAs/InP 250 nm gate length pHEMT. Next, we describe the analytical model based on the 2-port small-signal equivalent circuit of the device mentioned before and we calculate the

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“…In several other analytical noise models also which have been previously developed for the accurate noise performance evaluation, the effect of the gate-to-drain capacitance has been neglected [13,14]. A noise model proposed by Cappy [15], although includes the effect of C gd , is not suited for device design due to its numerical approach.…”

Section: Introductionmentioning

confidence: 99%

Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT

Bhattacharya¹,

Jogi²,

Gupta³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In the present work, the effect of the gateto-drain capacitance (C gd ) on the noise performance of a symmetric tied-gate In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As double-gate HEMT is studied using an accurate charge control based approach. An analytical expression for the gate-to-drain capacitance is obtained. In terms of the intrinsic noise sources and the admittance parameters (Y 11 and Y 21 which are obtained incorporating the effect of C gd ), the various noise performance parameters including the Minimum noise figure and the Minimum Noise Temperature are evaluated. The inclusion of gate-todrain capacitance is observed to cause significant reduction in the Minimum Noise figure and Minimum Noise Temperature especially at low values of drain voltage, thereby, predicting better noise performance for the device.

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Optimal noise figure of microwave GaAs MESFET's

Cited by 317 publications

References 9 publications

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT

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