2018 IEEE Student Conference on Research and Development (SCOReD) 2018
DOI: 10.1109/scored.2018.8710811
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Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor

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Cited by 6 publications
(6 citation statements)
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“…The application of more practical algorithms for the HO decision [ 68 , 69 ] are mathematically provided as follows: where RSRSs represents the service BSRS, and RSRSt is the target BSRS. The average received signal level was computed from the UE’s perspective across the carrier by every UE and then it moves to the eNB specific to begin the optimisation operation.…”
Section: The Simulation Scenario and System Modelmentioning
confidence: 99%
See 2 more Smart Citations
“…The application of more practical algorithms for the HO decision [ 68 , 69 ] are mathematically provided as follows: where RSRSs represents the service BSRS, and RSRSt is the target BSRS. The average received signal level was computed from the UE’s perspective across the carrier by every UE and then it moves to the eNB specific to begin the optimisation operation.…”
Section: The Simulation Scenario and System Modelmentioning
confidence: 99%
“…The application of more practical algorithms for the HO decision [68,69] are mathematically provided as follows:…”
Section: The Simulation Scenario and System Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…Fading occurs because of overlapping between two or more from the signals sent to the receiver at slightly different times. However, these waves are multipath waves that unite in the receiving antenna and give the result of a signal that can vary greatly in amplitude and phase, according to the transmitted signal width, the relative propagation time of the waves and the distribution of intensity [13][14][15]. Unexpected delays change in regarded with various signal paths in a multipath fading channel, as well as can be statistically distinguished only.…”
Section: Introductionmentioning
confidence: 99%
“…That is the main principle of Nano technology which invaded the field of applied science, manufacturing, industrial, military, medical, agricultural and other fields [1][2][3] The most remarkable example for that is in nanoelectronics and nanoscience, where the technological progress has come from reductions, downsizing transistors and adding more numbers of transistors per chip [4,5]. The scaling of the complementary metal-oxide-silicon (CMOS) does not track the constant-field scaling principle accurately because of non-scaling factors-the threshold voltage [6,7]. The metal oxide semiconductor field effect transistors (MOSFET) are aiming at creating more sophisticated integrated circuits via using more transistors per chip.…”
Section: Introductionmentioning
confidence: 99%