Optimal indium tin oxide layer as anti reflection coating for crystalline silicon solar cell with shallow emitter

The effects of orientation changes in indium tin oxide films on performance of crystalline silicon solar cell with shallow-emitter

“…A maximum cell efficiency of 17.27% (J sc ¼35.52 mA/cm 2 , V oc ¼596 mV and FF¼ 81.59%) was obtained at the optimum condition of I (222) /(I (222) þI (400) ) ratio ¼0.70. This cell efficiency is greater than that reported recently [1,8,9,18]. As seen in Fig.…”

“…The results show that the photovoltaic conversion efficiency is higher than that of the currently reported results [1,8,9]. used as the substrates.…”

“…It is reported that indium tin oxide (ITO) films could be considered as a practical solution to the problem of high resistivity in shallow-emitter solar cells, replacing the conventional SiN x films [1,8,9]. The internal resistance of a completely fabricated solar cell can be effectively reduced by application of the ITO coating over the existing metal contact structure of the front surface of the cell [8].…”

“…In addition, ITO films show excellent optical transmittance and are relatively stable at the high temperature required for solar cell processes [1]. Despite the several investigations carried out based on ITO antireflection for shallow-emitter solar cells [1,8,9], their low efficiencies still present a challenge that needs to be overcome.…”

Light Trapping in Silicon Based Tandem Solar Cell: A Brief Review

“…It was observed that front surface texturing can reduce reflection loss of incident light 5,8) ; this is effective in a broader wavelength range as compared to anti reflection coating 41,42) where the later is wavelength dependant.…”