The effects of orientation changes in indium tin oxide films on performance of crystalline silicon solar cell with shallow-emitter

Ahn, Shihyun; Le, Anh Huy Tuan; Kim, Sunbo; Park, Cheolmin; Shin, Chonghoon; Lee, Youn-Jung; Lee, Jaehyeong; Jeong, Chaehwan; Dao, Vinh Ai; Yi, Junsin

doi:10.1016/j.matlet.2014.06.074

Cited by 10 publications

(2 citation statements)

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“…Moreover, the transmittance linearly increased with x in all wavelength ranges of interest, as presented in figure 9(b). The higher transmittance can allow more light to pass through the hole-selective contact, and then be absorbed in the absorber layer [26,27]. Therefore, the higher QE and J sc at x close to 3 can be attributed to the higher optical transmittance.…”

Section: Solar Cell Fabricationsmentioning

confidence: 99%

Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WO _x contacts in silicon heterojunction solar cells

Tran¹,

Trinh²,

Viet³

et al. 2020

Semicond. Sci. Technol.

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The stoichiometry value x of WO x , or its oxidation state, is crucial for improving performances of the hole-selective contact heterojunction silicon solar cell. However, it is challenging to tune the films' oxidation state using the well-known evaporation method. In this study, a simulation was performed to analyze the effect of x on short-circuit current (J sc ) loss, attributed to the holeselective contact in the device. Compared to the thickness of WO x layer, x has a more important role in minimizing J sc loss. Based on the simulation, the WO x /c-Si heterojunction solar cells having hole-selective WO x contacts with tuned x to vary its oxidation state were fabricated using reactive magnetron sputtering. The relationships of the open-circuit voltage (V oc ) and J sc with respect to x were similar. The experimentally determined J sc increased from 34.7 to 36.6 mA cm −2 when x was increased from 2.72 to 2.77; this result is consistent with the simulation. Nevertheless, fill factor (FF) reduced with the increase of x, owing to the reduced conductivity of WO x . Both oxidation state and film conductivity must be as high as possible to simultaneously achieve high V oc , J sc , and FF. The lowest x yielded a solar cell efficiency of 13.3%.

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Section: Solar Cell Fabricationsmentioning

confidence: 99%

Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WO _x contacts in silicon heterojunction solar cells

Tran¹,

Trinh²,

Viet³

et al. 2020

Semicond. Sci. Technol.

Self Cite

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“…Despite the great popularity of silicon nitride and silicon dioxide, other materials such as titanium dioxide (TiO 2 ) are still being researched (Panek et al , 2008, Swatowska et al , 2011) Moreover, the scientists are looking for the another solutions and they are testing new materials that can be used as antireflective layer of crystalline silicon solar cells. One of these materials are conductive oxides (Ryu et al , 2012; Ahn et al , 2014). In this paper, the results which are a continuation of the work on the use of ITO as an antireflective coating combined with the front electrode of crystalline silicon solar cell are presented (Drabczyk et al , 2015; Domaradzki et al , 2015).…”

Section: Introductionmentioning

confidence: 99%

Influence of ITO layer application on electrical parameters of silicon solar cells with screen printed front electrode

Drabczyk

Domaradzki

Kulesza-Matlak

et al. 2016

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Purpose The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO2, is very well transparent in the visible part of optical radiation; however, its low resistivity (lower that 10-3 Ohm/cm) makes it possible to use simultaneously as a transparent electrode for collection of photo-generated electrical charge carriers. This might also invoke increasing the distance between screen-printed metal fingers at the front of the solar cell that would increase of the cell’s active area. Performed optical investigation showed that applied ITO thin film fulfill standard requirements according to antireflection properties when it was deposited on the surface of silicon solar cell. Design/methodology/approach Two sets of samples were prepared for comparison. In the first one, the ITO thin film was deposited directly on the crystalline silicon substrate with highly doped emitter region. In the second case, the TCO film was deposited on the same type of silicon substrate but with additional ultrathin SiO2 passivation. The fingers lines of 80 μm width were then screen-printed on the ITO layer with two different spaces between fingers for each set. The influence of application of the ITO electrode and the type of metal electrodes patterns on the electrical performance of the prepared solar cells was investigated through optical and electrical measurements. Findings The electrical parameters such as short-circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency were determined on a basis of I-V characteristics. Short-circuit current density (Jsc) was equal to 32 mA/cm2 for a solar cell with a typical antireflection layer and 31.5 mA/cm2 for the cell with ITO layer, respectively. Additionally, electroluminescence of prepared cells was measured and analysed. Originality/value The influence of the properties of ITO electrode on the electrical performance of crystalline silicon solar cells was investigated through complex optical, electrical and electroluminescence measurements.

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ITO‐induced Columnar Polycrystalline Silicon Thin Films by CVD

et al. 2015

Chemical Vapor Deposition

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The effects of orientation changes in indium tin oxide films on performance of crystalline silicon solar cell with shallow-emitter

Cited by 10 publications

References 20 publications

Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WO _x contacts in silicon heterojunction solar cells

Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WO _x contacts in silicon heterojunction solar cells

Influence of ITO layer application on electrical parameters of silicon solar cells with screen printed front electrode

ITO‐induced Columnar Polycrystalline Silicon Thin Films by CVD

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The effects of orientation changes in indium tin oxide films on performance of crystalline silicon solar cell with shallow-emitter

Cited by 10 publications

References 20 publications

Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WO x contacts in silicon heterojunction solar cells

Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WO x contacts in silicon heterojunction solar cells

Influence of ITO layer application on electrical parameters of silicon solar cells with screen printed front electrode

ITO‐induced Columnar Polycrystalline Silicon Thin Films by CVD

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Product

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Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WO _x contacts in silicon heterojunction solar cells

Effects of oxidation state on photovoltaic properties of reactively magnetron sputtered hole-selective WO _x contacts in silicon heterojunction solar cells