Optimal control strategies for SiC MOSFET and Si IGBT based hybrid switch

Li, Zongjian; Wang, Jun; Jiang, Xi; Shen, Z. John; Yin, Xin; Zhou, Cheng; Deng, Linfeng

doi:10.1109/apec.2018.8341249

Cited by 21 publications

(12 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(16) and Eq. (17) show that the power losses of the SiC MOSFET and IGBT inside the hybrid switch are functions of the gate turn-off delay time. Because the junction temperature of the power device is dependent on its power loss, the two internal switches' junction temperatures inside the hybrid switch are strongly affected by its gate turn-off delay time.…”

Section: B Switching Loss Of the Hybrid Switchmentioning

confidence: 97%

“…The Si/SiC hybrid switch needs optimal gate delay time control between its two internal switches to achieve improved electrical and thermal performance because its gate configuration is different from conventional discrete power semiconductor devices [14][15][16][17][18][19][20][21].When the internal IGBT's turn-off is prior to SiC MOSFET's turn-off for an appropriate gate delay time, zero voltage switching (ZVS) off operation of the internal IGBT and the minimum total turn-off switching loss of the hybrid switch can be achieved [14][15][16][17]. When the IGBT's turn-on is prior to SiC MOSFET's turn-on for a very short gate delay time, the hybrid switch can achieve a minimum turn-on switching loss because of the high di/dt during the switching on transient [18][19].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range

Wang

Deng

et al. 2020

IEEE Trans. Power Electron.

Self Cite

View full text Add to dashboard Cite

Section: B Switching Loss Of the Hybrid Switchmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range

Wang

Deng

et al. 2020

IEEE Trans. Power Electron.

Self Cite

View full text Add to dashboard Cite

“…Ref. [24] further discussed the relationship between gate drive patterns and short-circuit ruggedness. In short-circuit mode, the turning off of the IGBT induced a large gate voltage oscillation of the SiC MOSFET, and the SiC MOSFET accidentally turned OFF within 1 μs.…”

Section: Gate Drive Pattern Optimizationmentioning

confidence: 99%

Review of Si IGBT and SiC MOSFET based on hybrid switch

Ning

Tang

Kang

et al. 2019

Chin. J. Electr. Eng.

View full text Add to dashboard Cite

SiC Hybrid switch (HyS) combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET, and the cost is closer to that of Si IGBT. The promising high performances of HyS will bring considerable achievement in terms of enhancing power density of a converter system. By reviewing the gate drive pattern, gate drive hardware, current sharing, module design, converter design, and cost, this paper introduces state-of-the-art SiC HyS.

show abstract

“…[22]- [24] studied the relationship between switching delay time and switching power loss but the selection of an appropriate delay time is not mentioned. [25]- [27] conducted research on the characteristics of Si/SiC hybrid devices. Starting from the performance of the hybrid device converter, the influence of the hybrid device gate drive control strategy on the characteristics of the hybrid device is analyzed.…”

Section: Introductionmentioning

confidence: 99%

Switching Time Delay Optimization for “SiC+Si” Hybrid Device in a Phase-Leg Configuration

et al. 2021

View full text Add to dashboard Cite

Compared to SiC MOSFET, the switching loss of Si IGBT is much higher due to its slow switching speed and tail current. Si IGBT/SiC MOSFET hybrid switch device can reach to optimal performance with low static and dynamic loss, which can improve the current capacity of SiC devices and reduce the power loss of Si IGBT based converters. With the separated gate control signals, the switching moments of the two devices can be controlled independently to ensure Si IGBT under zero-voltage switching (ZVS) conditions. This measurement tends to reduce the switching loss of Si IGBT. However, the switching time delay between these two devices has significant impacts on its power loss. In this paper, the switching time delay optimization method is proposed to minimize the power loss of the hybrid switch. The static and dynamic characteristics of Si IGBT/SiC MOSFET hybrid-paralleled switch are studied, and a generalized power loss model for hybrid switch is developed. The influence of switching time delay on the characteristics of hybrid switch is analyzed and verified through double pulse tests in a phase-leg configuration. The experimental results show that the optimal turn-on delay time is that the two devices turn on at the same time and the turn-on loss can be reduced by about 73% compared with the solely Si IGBT and by about 52% compared with the solely SiC MOSFET. While the optimal turn-off sequence is that the Si IGBT turns off ahead of the SiC MOSFET. Under the proposed optimal turn-off delay time of the hybrid switch, the turn-off loss is reduced by about 61.4%. This optimization strategy is used in a Buck converter to verify the superiority of the SiC/Si hybrid switch and the optimal switching sequence. Simulation results show that the optimal switching sequence is consistent with theoretical analysis, and the efficiency is

show abstract

Optimal control strategies for SiC MOSFET and Si IGBT based hybrid switch

Cited by 21 publications

References 5 publications

Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range

Active Gate Delay Time Control of Si/SiC Hybrid Switch for Junction Temperature Balance Over a Wide Power Range

Review of Si IGBT and SiC MOSFET based on hybrid switch

Switching Time Delay Optimization for “SiC+Si” Hybrid Device in a Phase-Leg Configuration

Contact Info

Product

Resources

About