Review of Si IGBT and SiC MOSFET based on hybrid switch

Ning, Puqi; Tang, Yuhai; Kang, Yuting; Cao, Han; Li, Lei

doi:10.23919/cjee.2019.000017

Cited by 25 publications

(14 citation statements)

References 15 publications

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“…As for the simulation, the voltage and current required for losses calculation are calculated by DSED method to improve the accuracy and speed of simulation [28]. By utilizing the losses branch model of PET and simulating the actual operation of a PET, the losses obtained from the simulation is shown in Table I.…”

Section: A the Validation Of The Losses Modelmentioning

confidence: 99%

A discrete state event driven simulation based losses analysis for multi-terminal megawatt power electronic transformer

Zheng

Zhao

Shi

et al. 2020

Trans. Electr. Mach. Syst.

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Section: A the Validation Of The Losses Modelmentioning

confidence: 99%

A discrete state event driven simulation based losses analysis for multi-terminal megawatt power electronic transformer

Zheng

Zhao

Shi

et al. 2020

Trans. Electr. Mach. Syst.

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“…Silicon Carbide (SiC) is regarded as the next-generation power semiconductor for automotive applications due to its superior properties such as high switching frequency, low switching loss, and better thermal capability [1]- [4]. The implementation of SiC power devices in electric vehicle (EV) powertrains can reduce the power loss and further improve the energy conversion efficiency, and this has been widely proven [5]- [13].…”

Section: Introductionmentioning

confidence: 99%

The Potential Impact of Using Traction Inverters With SiC MOSFETs for Electric Buses

Wang

Xing

et al. 2021

IEEE Access

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The efficiency improvements offered by adopting Silicon Carbide (SiC) devices in Electric Vehicle (EV) inverters has been widely reported in various studies. However, it has still not been established whether or when the efficiency benefits can counteract the high price of SiC devices, especially for the scenario of urban electric buses. In this paper, the potential impact of installing SiC devices on electric buses is analyzed from the perspective of economic benefits. The SiC inverter used in the drive system is based on a discrete MOSFET in parallel. For comparison, an Si inverter based on a sixthgeneration IGBT produced by Infineon is also evaluated. A vehicle simulation platform is established in Simulink for an evaluation of energy consumption for different scenarios. It is shown that significant energy savings can be gained when the vehicle operates mostly in the partial load area. While in the nominal load area, energy savings are very limited. Based on the analysis, the conditions for offsetting the cost premium of SiC devices to realize system-level advantages are discussed using a multi-dimensional analysis considering the change in battery and device prices, driving range, vehicle mass, and driving cycles.INDEX TERMS SiC devices, electric bus, energy consumption, system-level advantages, driving cycles.

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“…Silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs) have emerged as ideal candidates for helping to meet increasing demands for efficiency, power density, reliability, and lower cost in power electronics systems [1] . SiC MOSFETs are unipolar devices and demonstrate a low on-state voltage drop, low terminal capacitance, and dramatically lower switching losses as compared to similarly rated silicon insulated gate bipolar transistors.…”

Section: Introduction1mentioning

confidence: 99%

Implementation of 1.7 kV silicon carbide metal oxide semiconductor field effect transistors in auxiliary power supplies for industrial applications

Zhang

Sheh

2020

Chin. J. Electr. Eng.

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An auxiliary power supply (Aux-PS) has become an essential component of electronic equipment for many industrial applications, such as in motor drives, photovoltaic (PV) inverters, uninterruptible power supply (UPS) systems and modular multilevel converters. The introduction of 1 700 V silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) is useful for such applications, providing benefits with respect to a low on-state resistance, smaller package, low switching loss and single-switching implementation. A single end flyback Aux-PS is designed for industrial applications with a wide input voltage range using 1.7 kV SiC MOSFETs. The special design tradeoffs involved in the usage of SiC MOSFETs are discussed in detail, such as those with regard to gate driving voltage selection, isolation transformer design considerations, and clamping circuit design details. A 60 W demonstration hardware is developed and tested under different working conditions. The results verify the higher efficiency and better thermal performance of the proposed hardware relative to those of traditional Si solutions.

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Review of Si IGBT and SiC MOSFET based on hybrid switch

Cited by 25 publications

References 15 publications

A discrete state event driven simulation based losses analysis for multi-terminal megawatt power electronic transformer

A discrete state event driven simulation based losses analysis for multi-terminal megawatt power electronic transformer

The Potential Impact of Using Traction Inverters With SiC MOSFETs for Electric Buses

Implementation of 1.7 kV silicon carbide metal oxide semiconductor field effect transistors in auxiliary power supplies for industrial applications

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