Optically Tunable Transient Plasmons in InSb Nanowires

Abstract

Optical carrier incubation can effectively alter the electron transport properties of semiconductors; thus, optical switching of the plasmonic response of the semiconductor enables the ultrafast manipulation of the light at the nanoscale. Semiconductor nanostructures are promising platforms in on‐chip high‐speed plasmonic devices, owing to their high photoinduced electron injection efficiency at sub‐picosecond and compatibility with contemporary semiconductor technologies. The pure single crystalline InSb nanowires are promising plasmonic materials in the mid‐infrared region due to their high electron mobility and small electron effective mass. Here, the pump–probe nanoscopy is utilized to investigate the pump fluence dependency and the dynamics of the non‐equilibrium plasmons in the InSb nanowires. The InSb plasmon is successfully switched by injecting the photoinduced electrons and the practical tuning of the plasmon frequency to one octave is shown by increasing the pump fluence from 0 to 90 µJ cm−2. The density of the photoinduced electrons in InSb nanowires is 18.8 × 1018 cm−3 with pump fluence as low as 90 µJ cm−2. The high electron mobility of the InSb supports the low‐loss plasmon with a damping rate of ≈200 cm−1. The InSb nanowires’ excellent plasmonic properties ensure that they are a promising platform for upcoming high‐speed mid‐infrared plasmonic materials for informatic devices.

Research advances in polaritonics based on near-field optical imaging technique

“…Real-space imaging of graphene plasmons: (a) Near-field imaging of graphene plasmons on SiC substrate [34] ; (b) wavefront mapping of graphene plasmons launched by metal antenna [37] ; (c) near-field images of the propagating graphene plasmons under different driving currents (top panel) and the corresponding line profiles (bottom panel) [40] ; (d) nano-infrared images of WO x /graphene heterostructures with a varied number of tungsten diselenide (WSe 2 ) spacer layers [41] . [43] . 此外, 他 们还研究了锑化铟纳米线等离极化激元超快动力 学过程(图2(b)) [44] .…”

“…当一维体系中由于量子限制, 电子间产生强关联效应时, 电子行为表现为拉廷格 液体 [45,46] , 其集体电荷激发是一维量子等离极化激 元. 一维碳纳米管因具备强量子局域性可支持拉廷 格等离极化激元, 其首次实验观测是由Wang研究 组 [47,48] 图 2 一维纳米结构中的等离极化激元 (a)砷化铟纳米线的原子力显微镜图像(上)和对应的红外纳米光学成像图(下) [42] , 入 射光频率为901 cm -1 , 标尺为1; (b)锑化铟纳米线的超快近场光学图像, 泵浦光和探测光的延迟从0-10 ps [44] , 标尺为500 nm; (c)不同时间延迟下砷化铟孪晶超晶格纳米线的红外光谱测量结果 [43] ; (d)金属型(M1和M2)和半导体型(S1和S2)碳纳米管的 近场光学图像, 背栅电压数值分别为-20 V (上)和0 V (下) [48] Fig. 2.…”

“…2. Plasmon polaritons in one-dimensional nanostructures: (a) AFM topography image of an indium arsenide nanowire (top) and corresponding nano-infrared image (bottom) [42] , the incident frequency is 901 cm -1 , scale bar, 1 μm; (b) ultrafast near-field images of the indium antimonide nanowire with pump-probe delays from 0-10 ps [44] , scale bar, 500 nm; (c) infrared amplitude spectra of the indium arsenide twinning superlattice nanowire at different pump-probe delay times [43] ; (d) near-field images of metallic (M1 and M2) and semiconducting (S1 and S2) carbon nanotubes at different gate volrages -20 V (top panel) and 0 V (bottom panel) [48] . 其中金属碳纳米管具有线性的能带结构, 而半导体 碳纳米管则是双曲型能带结构, 分别对应于线性和 非线性拉廷格体系.…”

At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures

“…III–V semiconductor heterostructures have a central role with diverse functionality in electronic and optoelectronic devices. Implementing such systems in freestanding nanowires could further broaden the scope of potential applications such as the design of complex quantum heterostructures, − the management of light in nanoscale, − the engineering of strain , or crystal structure, − and the heterogeneous integration in technology-relevant platforms. − It also raises expectations for on-demand photon sources (quantum dots − and distributed Bragg reflectors − hosted in the same nanowires) in quantum technology platforms. However, reducing the physical dimensions of heterostructures in nanotechnology devices toward atomic scales brings about a critical need for precise modulation of the chemical composition and effective management of the unintentional compositional grading across heterointerfaces.…”

Separated Electronic and Strain Interfaces in Core/Dual‐Shell Nanowires: Unlocking the Potential of Strained GaAs for Applications Across Near‐Infrared

“…Semiconductor nanowires are promising for a wide range of nanotechnology applications owing to the unique possibilities they offer in many aspects, including the design of complex quantum heterostructures, [1][2][3] the management of light in nanoscale, [4][5][6] the engineering of strain [7,8] or crystal structure, [9,10] and the heterogeneous integration in technologyrelevant platforms, [11][12][13][14] just to mention a few. Concerning strain engineering, freestanding core/shell heterostructures offer the possibility to combine materials with very different lattice constants, far beyond what is possible in equivalent thin film heterostructures.…”