Optically enabled magnetic resonance study ofAs75andSb121in

Jeff Z. Salvail

¹

,

Phillip Dluhy

²

,

K. J. Morse

³

et al.

Silicon-Integrated Telecommunications Photon-Spin Interface

“…2(b) we report the first high-resolution optical spectroscopy of the TX 0 ZPL of T centers in 28 Si. As has been observed with group-V donors [34,40]…”

Characterization of the T center in $^{28}$Si

“…These other defects have contributed in varying degrees to the backgrounds of all PL spectra of T centers reported to date, which make the extraction of the true Debye-Waller factor unreliable. The Debye-Waller factor can be measured accurately by normaliz- 28 Si. Weak features in the 28 Si spectrum attributed to 13 C isotope-shifted replicas for the T center's two inequivalent carbon atoms are visible at (c) 935.06093 (7) meV, with an integrated area ratio of 1.1(1)% relative to the TX0 ZPL, and (d) a doublet at 935.14204 (10) meV and 935.14240(6) meV, with a combined integrated ratio of 1.16(9)% relative to the TX0 ZPL.…”

“…Here we characterize the T center in silicon, a highly stable silicon defect which supports a short-lived bound exciton that upon recombination emits light in the telecommunications O-band. In this first study of T centers in 28 Si, we present the temperature dependence of the zero phonon line, report ensemble zero phonon linewidths as narrow as 33 (2) MHz, and elucidate the excited state spectrum of the bound exciton. Magneto-photoluminescence, in conjunction with magnetic resonance, is used to observe twelve distinct orientational subsets of the T center, which are independently addressable due to the anisotropic g factor of the bound exciton's hole spin.…”

“…Silicon radiation damage centers have themselves been the subject of a number of recent studies [4][5][6][7] due to their bright luminescence, sub-microsecond luminescence lifetimes, near radiatively-limited optical linewidths in 28 Si, and wavelengths in the telecommunications bands. However, despite early reports that the G center in particular is connected to an optically detected magnetic resonance (ODMR) signal [8], the dominant zero phonon * s.simmons@sfu.ca line (ZPL) transitions of the G, as well as the C and W radiation damage centers, have each been shown to be singlet-to-singlet transitions with no ground state unpaired electron or hole spins in which to hold quantum information.…”

“…The little-studied T center, by contrast, was thought to have a spin-1/2 to spin-1/2 optical transition directly in the telecommunications O-band, although the composition of the ground state was in dispute [2,9]. Encouraged by this, and the knowledge that many defects in isotopically purified 28 Si boast exceptionally long electron [10,11] and nuclear [12] spin lifetimes, the goal of this work and its sister publication [1] is to assess the T center for its potential as a silicon telecom photon-spin interface.…”