Optically and Electrically Driven Organic Thin Film Transistors with Diarylethene Photochromic Channel Layers

Hayakawa, Ryoma; Higashiguchi, Kenji; Matsuda, Kenji; Chikyow, Toyohiro; Wakayama, Yutaka

doi:10.1021/am400030z

Cited by 82 publications

(77 citation statements)

References 34 publications

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“…The reported OFET structures comprised some photochromic material as a dopant in a semiconductor layer, [15][16][17][18][19][20] as a buffer layer between semiconductor and source/ drain electrodes, [ 21,22 ] and as an interfacial layer between wileyonlinelibrary.com Various functionalized bis(heteroaryl)ethenes represent a promising group of photochromic materials for designing organic memory elements (see examples in entries 10-17, Table S1, Supporting Information). [ 26,[30][31][32][33] Recently, some of us have developed a new family of photochromic diarylethenes comprising cyclopentenone "bridge," electron rich thiophene and electron defi cient oxazole pendant units as hetaryl residues. [ 34,35 ] Here, we utilized one of these exciting compounds in the design of optical memory elements.…”

Section: Doi: 101002/aelm201500219mentioning

confidence: 99%

OFET‐Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2‐bis(Hetaryl)ethene Dielectric Layers

Frolova

Rezvanova

Ширинян

et al. 2015

Adv Elect Materials

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semiconductor and dielectric. [23][24][25][26][27] The latter approach seems to be the most promising. It is known that the highest density of charge carriers in operating OFET fl ows in a few molecular layers of semiconductor adjacent to dielectric. [ 28 ] Therefore, photoisomerization of a photochromic compound at the dielectric/semiconductor interface changes signifi cantly electrical characteristics of the conducting channel (density of traps/carriers, electrical permittivity, capacitance) and the device itself thus providing the required photoswitching effect.While comparing the characteristics of the OFET-based memory elements, few important parameters should be considered. First of all, it is a switching coeffi cient defi ned as k sw = I DS (1)/ I DS (2), where I DS (1) and I DS (2) correspond to the drain currents of the OFET in states 1 and 2, respectively, measured at the same gate voltage V GS = const, which shows how strong is the hysteresis in the electrical characteristics of the transistor or how wide is the memory window. The device operating voltages, a programming speed, and a long-term stability of the distinct electrical states (retention characteristics) are also crucially important.Analyzing previous reports on the OFET-based optical memories comprising photochromic materials, one can notice their low switching coeffi cients which stay typically below 10 and hardly exceed 100 for the best examples (Table S1, Supporting Information). These devices typically operate at high voltages (30-100 V), while their programming is very slow and requires light illumination within tens of seconds or even minutes. To make this type of memory elements more interesting for practical applications one has to improve signifi cantly their characteristics. We have reported very recently memory elements based on a photochromic spirooxazine which showed decent operating voltages (<5 V) and reasonably high switching coefficients of ≈10 3 . [ 29 ] Unfortunately, the programming speeds were still rather low mainly due to fundamental limitations of the used materials and the device architecture.Here we present a concept of the memory elements operating via optically and electrically triggered charge separation between the organic semiconductor ([60]fullerene) and the photochromic dielectric (specially designed 1,2-bis(hetaryl) ethene) layers. The proposed approach allowed us to decrease the device programming time by three orders of magnitude down to few milliseconds with a high potential to reach practically interesting microsecond operation regime. Additionally, the designed devices showed exceptionally wide memory windows refl ected by the switching coeffi cients of ≈10 5 at reasonably low operation voltages (3-10 V).

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Section: Doi: 101002/aelm201500219mentioning

confidence: 99%

OFET‐Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2‐bis(Hetaryl)ethene Dielectric Layers

Frolova

Rezvanova

Ширинян

et al. 2015

Adv Elect Materials

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“…These different switching states should be thermally stable, and the photoisomerization process should be efficient and highly robust, that is, fatigue resistant. All of these criteria are met by diarylethenes (DAEs) 7,8 , which are among the most interesting photochromic molecules to be embedded into thin-film transistors (TFTs) as a single semiconducting component 9 . However, thin films made solely from DAEs suffer from rather poor charge transport properties.…”

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confidence: 99%

Optically switchable transistors by simple incorporation of photochromic systems into small-molecule semiconducting matrices

et al. 2015

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The fabrication of multifunctional high-performance organic thin-film transistors as key elements in future logic circuits is a major research challenge. Here we demonstrate that a photoresponsive bi-functional field-effect transistor with carrier mobilities exceeding 0.2 cm 2 V À 1 s À 1 can be developed by incorporating photochromic molecules into an organic semiconductor matrix via a single-step solution processing deposition of a two components blend. Tuning the interactions between the photochromic diarylethene system and the organic semiconductor is achieved via ad-hoc side functionalization of the diarylethene. Thereby, a large-scale phase-segregation can be avoided and superior miscibility is provided, while retaining optimal p-p stacking to warrant efficient charge transport and to attenuate the effect of photoinduced switching on the extent of current modulation. This leads to enhanced electrical performance of transistors incorporating small conjugated molecules as compared with polymeric semiconductors. These findings are of interest for the development of high-performing optically gated electronic devices.

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“…For implementation into real molecular electronics devices such as logic gates (5] and optically switchable transistors [ 6,7] both 0 F and CF ofDAEs should possess the key properties [1 ]: thermal stability, high fatigue resistance, rapid optical response, and minor structural change while switching. Most of these requirements are fulfilled, if appropriate photochromic core and side-chain groups are combined (2,8].…”

Section: Introductionmentioning

confidence: 99%

Picosecond cyclization reaction dynamics of furan-based diarylethene with thiosemicarbazone side-chain groups

Khodko

Khomenko

Mamuta

et al. 2016

Molecular Crystals and Liquid Crystals

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Picosecond cyclization reaction dynamics of furan-based photochromic diarylethenes with thiosemicarbazone side-chains were studied by femtosecond transient absorption spectroscopy. The monitored ring-closing reaction in the time range of 0+1100 ps is characterized by two main stages. First stage proceeds during the first 1.1 ps and is associated mainly with redistribution of rr -rr molecular orbitals of excited open-ring molecules which consequently leads to the formation of excited closed-ring molecules. During the next 300 ps, a long-term relaxation via vibrational cooling of closed-ring form occurs. The obtained relaxation dynamics curve was fitted by an exponential decay function with 68 ps time constant.

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Optically and Electrically Driven Organic Thin Film Transistors with Diarylethene Photochromic Channel Layers

Cited by 82 publications

References 34 publications

OFET‐Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2‐bis(Hetaryl)ethene Dielectric Layers

OFET‐Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2‐bis(Hetaryl)ethene Dielectric Layers

Optically switchable transistors by simple incorporation of photochromic systems into small-molecule semiconducting matrices

Picosecond cyclization reaction dynamics of furan-based diarylethene with thiosemicarbazone side-chain groups

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