Optically active oxygen-deficiency-related centers in amorphous silicon dioxide

Optical properties of chalcogen-loaded zeolite (ZSM-5)

“…For instance, S and Te may react with O atoms in ZSM-5, producing defects, which have similar structures to the so-called oxygen-deficient center in SiO 2 [35], which is known to provide an absorption and PL peak at ~2.8 eV.…”

Nature of intrinsic and extrinsic electron trapping in SiO2

“…1,2 Hole trapping in silica has been relatively well understood with the models of self-trapped holes [3][4][5][6] and several hole trapping defects well established. [7][8][9] However, identifying sites responsible for electron trapping in silica, bulk and surface, has proved particularly challenging. This is because of a large number of possible charge redistribution channels and presence of water and impurities in most samples.…”

Time-resolved photoluminescence of implanted SiO2:Si+ films

“…Our previous investigation has shown that there could be even more types of oxygen-deficient centers contributing to 2.7-3.2 eV and 4.2-4.5 eV PL [14]. The second approach ascribes them to twofold silicon and germanium atoms respectively [6,15,16]. Moreover, in the present case we cannot confidently propose germanium-related models of ODCs as Ge atoms were not deliberately introduced into silica matrix.…”

“…1. The non-elementary 4.5 eV PL band corresponding to the singlet luminescence of a-ODC (4.3 eV) and b-ODC (4.5 eV) [6], as well as an unidentified peak near 3.6 eV are observed under 5.1 eV excitation. The growth of the luminescence intensity near 3.1 eV is assumed to be due to the presence of the ODC triplet radiation.…”

“…On the one hand the blue-violet photoluminescence of SiO 2 is generally believed to be caused by oxygen-deficient centers [6]. Recently another yellow luminescence band (2.15 eV) is reported in literature [1,2] which was not studied intensively.…”