Optical waveguides in LiNbO3 formed by ion implantation of helium

Destéfanis, G.; Townsend, P. D.; Gailliard, J. P.

doi:10.1063/1.90025

Cited by 85 publications

(13 citation statements)

References 10 publications

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“…The production of radiation damage in LiNbO, by ion irradiation is a useful method to change the optical and chemical properties of the material in thin near-surface layers. Several authors [l to 41 pointed out a remarkable decrease in the refractive index up to saturation values Ano/no = 0.07 0.01 [2,4] a t room teniperature implantations. Damage formation and refractive index change are in rough approximation insensitive to ion species and primarily a function of the energy density deposited by nuclear processes [2].…”

Section: Introductionmentioning

confidence: 99%

Anisotropic Effects in N+-Implanted LiNbO3

Jetschke

Karge

Hehl

1983

Phys. Stat. Sol. (a)

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A model of damage formation in LiNbO3 by N+ (150 keV, 300 K)‐implantation is discussed including the results of RBS, volume expansion, and refractive index investigation of simultaneously implanted, X‐, Y‐ and Z‐cuts. For dose values D italicN + ≦ 1 × 1015 cm−2 most of the displaced Nb atoms occupy vacant octahedral lattice sites. Because of the high stability of the crystal structure in the c‐direction, a complete amorphization of the implanted LiNbO3 layers is not attained even with D italicN + = 4 × 1016cm−2.

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Section: Introductionmentioning

confidence: 99%

Anisotropic Effects in N+-Implanted LiNbO3

Jetschke

Karge

Hehl

1983

Phys. Stat. Sol. (a)

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“…[1][2][3][4] Its general applicability comes from the simplicity of the physical mechanism that was proposed for defining a waveguide. 5,6 The original model capitalizes on the fact that the energetic light ions lose most of their initial kinetic energy, ϳ1 or 2 MeV, by electronic interaction within the first few microns of the sample, causing little or negligible structural damage. At the end of the ion track, the ions undergo elastic nuclear collisions, causing atomic displacements, which at high doses above a few times 10 16 ions/cm 2 lead to partial or even complete amorphization of the lattice.…”

Section: Introductionmentioning

confidence: 99%

Mode gaps in the refractive index properties of low-dose ion-implanted LiNbO3 waveguides

Rams

Olivares

Chandler³

et al. 2000

Journal of Applied Physics

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Exciton polaritons in semiconductor waveguides Appl. Phys. Lett. 102, 012109 (2013) Photonic microdisk resonators in aluminum nitride J. Appl. Phys. 113, 016101 (2013) Electrically controlled absorption in a slab waveguide formed by the implantation of protons in a potassium lithium tantalate niobate substrate Appl. Phys. Lett. 101, 261101 (2012) μ-Raman spectroscopy characterization of LiNbO3 femtosecond laser written waveguides J. Appl. Phys. 112, 123108 (2012) Additional information on J. Appl. Phys. Data are presented for the refractive index profiles for low-dose He ϩ ion-implanted LiNbO 3 waveguides. In the nuclear stopping region, the extraordinary index is increased for low ion doses, by contrast with index reduction normally associated with ion-implanted waveguiding structures. The index increase was confirmed by fabricating a buried waveguide for the extraordinary index by use of multi-energy implants. For single-energy implants, data are shown which map the extraordinary index at the surface together with that in the nuclear collision zone, as a function of angle relative to the z axis of light propagation in surface waveguides for X and Y cut LiNbO 3 . These indices cross over near 45°, which results in a mode gap for which waveguide modes are not supported. A mechanism for this behavior is discussed based on defect-induced lattice relaxation. The phenomenon of a controlled mode gap may have applicability for optoelectronic and nonlinear materials and devices.

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“…In late 1970s ion implantation was demonstrated to be an alternative method for forming waveguide structures in optical materials [7]. Since the first proton-implanted waveguide in fused silica was reported, waveguides have been so far fabricated in more than 100 optical materials (including crystals, glasses, and even polymers) by implantation of various ions at the energies of several kilo-electron-volts (keV) up to several mega-electron-volts (MeV) [8].…”

Section: Introductionmentioning

confidence: 99%