Optical Transmission and Photoconductive and Photovoltaic Effects in Activated and Unactivated Single Crystals of ZnS

Cheroff, G.; Keller, Seymour P.

doi:10.1103/physrev.111.98

Cited by 57 publications

(10 citation statements)

References 8 publications

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“…The changes in structure from cubic to hexagonal induced by stacking faults lead to a significant difference in electrostatic potential around the structure interface, and efficiently separate the photo-induced electrons and holes, thus resulting in the extremely high photocatalytic activity. [205][206][207][208] These interesting findings will be published in international journals later. Apparently, the efficient charge separation ability of planar defects (stacking faults and twinning) provides a novel modification idea for semiconductor development.…”

Section: Constructing Special Nano-structurementioning

confidence: 65%

Metal sulphide semiconductors for photocatalytic hydrogen production

Zhang

Guo

2013

Catal. Sci. Technol.

499

257

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Photocatalytic hydrogen production using semiconductor materials is one of the ideal processes for direct solar energy conversion. Sulphide semiconductor photocatalysts have attracted much attention due to their excellent solar spectrum responses and high photocatalytic activities. This article presents recent research progress in the development of visible light driven sulphide photocatalysts, focusing on the expansion of solar spectrum response and enhancement of charge separation efficiency. As is known, the ultimate goal of photocatalytic hydrogen production is to meet the practical energy demand of human beings. Thus, design of highly efficient and low cost sulphide photocatalysts with excellent sunlight response is highly desired. So we also highlight the crucial issues in the development of highly efficient sulphide photocatalysts without noble metal cocatalysts. The present paper is expected to provide important scientific reference for future works. Finally, the challenges and perspectives in this area are also discussed.

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Section: Constructing Special Nano-structurementioning

confidence: 65%

Metal sulphide semiconductors for photocatalytic hydrogen production

Zhang

Guo

2013

Catal. Sci. Technol.

499

257

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“…In the literature on zinc sulphide (Merz 1958, Cheroff and Keller 1958, Ellis et a1 1958, Neumark 1962, Shachar and Brada 1970, the anomalous photovoltaic effect is usually explained by the alternation of zones 1 and zones 2, as seen in figure 7. These zones have different energy gaps Wgl and Wg2 and moreover asymmetric potential barriers at boundaries establish opposite internal electrical fields.…”

Section: Discussionmentioning

confidence: 99%

The anomalous photovoltaic effect in the absorption tail of cubic ZnSe

Baillou

Bugnet

Daunay

1979

J. Phys. D: Appl. Phys.

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An anomalous but weak photovoltaic effect has been observed in cubic crystals of zinc selenide in the spectral range of the absorption tail. Parallelepiped samples exhibit twinned and birefringent strips, and a photovoltage of about 100 mV with reversal of sign appears when the electrodes are parallel to the twinning planes. A study of the optical absorption tail shows that the absorption coefficient is different from a twinned area and an untwinned area. It is attempted to explained qualitatively the experimental results with a model derived from that of Cutter and Woods (1975) when the wavelength is greater than the optical absorption threshold.

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“…S. P. Keller, G. Cheroflf, R. C. Enk, and G. D. Pettit measured optical properties of zinc sulfide [8][9][10], The most interesting result was the observation by Cheroflf and Keller [8] of photovoltages greater than the energy gap. Swanson [11] partially explained this result by a model involving a series of asymmetric p-n junctions in the material, but could not account for the reversal of sign of the photovoltage with photon energy observed by Cheroff and Keller.…”

Section: Early Workmentioning

confidence: 97%

Semiconductors at IBM: Physics, Novel Devices, and Materials Science

Keyes

Nathan

1981

IBM J. Res. & Dev.

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Work on semiconductor physics, devices, and materials science carried on at IBM in the last twenty-five years is reviewed. Topics covered include hot electrons, inversion layers, the injection laser, electroluminescence, the Gunn effect, MESFETs, solar cells, superlattices, and amorphous materials and effects.The earliest IBM work was devoted to the theory of transport properties, primarily the Hall effect, and to the study of electron states. One significant early result was obtained by J. A. Swanson [2], who showed that the wellknown result for the saturation Hall constant R. (the Copyright IWl by International Business Machines Coiporation. Copying is permitted without payment of royalty provided that (1) each reproduction is done without alteration and (2) the Journal reference and IBM copyright notice are included on the first page. The title and abstract may be used without further permission in computer-based and other information-service systems. Permission to republish other excerpts should be obtained from the Editor. 779

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Optical Transmission and Photoconductive and Photovoltaic Effects in Activated and Unactivated Single Crystals of ZnS

Cited by 57 publications

References 8 publications

Metal sulphide semiconductors for photocatalytic hydrogen production

Metal sulphide semiconductors for photocatalytic hydrogen production

The anomalous photovoltaic effect in the absorption tail of cubic ZnSe

Semiconductors at IBM: Physics, Novel Devices, and Materials Science

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