ZnSe single crystals grown in vapour phase technique with sphalerite structure are cut according to faces (110), (110), (001) in order to study the coefficient γ41 of the electrooptic tensor. These samples exhibit, without any electric field applied, a parasitic birefringence linked to the plane crystal defects. This ZnSe is biaxial and presents a great dispersion of index as well as a variation of the position of the optic axes between the absorption threshold and 6000 Å, but the axis [110] remains always a principal axis for the dielectric tensor.
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