Optical transitions on (1 1 0) surfaces of III–V compounds

Berkovits, V. L.; Ivantsov, L. F.; Makarenko, I. V.; Minashvili, T. A.; Safarov, V. I.

doi:10.1016/0038-1098(87)90696-x

Cited by 46 publications

(12 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[9] and our theoretical results of InSb with experimental results of an oxidized InSb surface from Ref. [10]. In both cases, we found that our theoretical SO coupling results are in better agreement with the experimental results than the results without SO coupling.…”

Section: Introductionsupporting

confidence: 87%

Spin–orbit effects on the optical anisotropy of semiconductor surfaces

Vázquez-Nava

Mendoza

Arzate

2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

We study the effects of spin-orbit (SO) coupling on the reflectance anisotropy spectroscopy of semiconductor surfaces. The 3 * sp s nearest-neighbor tight-binding model with allowance for SO interaction is used to obtain theoretical reflectance anisotropy spectra of clean (110)1 1 ¥ surfaces of III -V semiconductors. We compare our SO-spectra with the experimental spectra and find good agreement between them.

show abstract

Section: Introductionsupporting

confidence: 87%

Spin–orbit effects on the optical anisotropy of semiconductor surfaces

Vázquez-Nava

Mendoza

Arzate

2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Due to these difficulties, optical in situ measurement techniques like reflectance anisotropy spectroscopy (RAS) were applied [3][4][5]. Therefore, a better understanding of the formation of InAs QDs on GaAs (0 0 1) in the MOVPE has been achieved [6,7].…”

Section: Introductionmentioning

confidence: 99%

Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy

Kremzow¹,

Pristovsek²,

Kneissl³

2008

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Since its development by Aspnes et al [1,2] and Berkovits et al [3] in 1985 it has been successfully applied to all kinds of surface-and interface-related processes, in ultra-high vacuum (UHV) as well as in gaseous environments like metal-organic vapour phase epitaxy (MOVPE). In the case of an isotropic bulk, RAS probes the optical anisotropy of interfaces and thin surface layers.…”

Section: Introductionmentioning

confidence: 99%

A fast reflectance anisotropy spectrometer for in situ growth monitoring

Kaspari

Pristovsek

Richter

2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

We report on an optical multichannel RAS (Reflectance Anisotropy Spectroscopy) setup capable of measuring at multiple photon energies simultaneously in the spectral range between 1.4 and 5.0 eV at a temporal resolution of up to 30 ms. The setup is specifically designed for time-resolved studies of surface processes (e.g. epitaxial growth). Its accuracy was evaluated on static surfaces by comparison with RAS spectra acquired using a conventional scanning RAS setup. The performance was demonstrated by studying 2D island growth oscillations during GaAs epitaxy with TMGa and AsH 3 or tBAs in metal-organic vapour phase epitaxy (MOVPE).

show abstract

Optical transitions on (1 1 0) surfaces of III–V compounds

Cited by 46 publications

References 12 publications

Spin–orbit effects on the optical anisotropy of semiconductor surfaces

Spin–orbit effects on the optical anisotropy of semiconductor surfaces

Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy

A fast reflectance anisotropy spectrometer for in situ growth monitoring

Contact Info

Product

Resources

About