Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy

Kremzow, Raimund; Pristovsek, Markus; Kneissl, Michael

doi:10.1016/j.jcrysgro.2008.07.047

Cited by 16 publications

(11 citation statements)

References 12 publications

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“…This result means that a partially stable condition to maintain the QD size appeared in this growth condition. In addition, the speed of ripening was considerably faster than that of the results reported for In(Ga)As QDs although the substrate temperature was lower than them [45,48,49]. We believe these features were caused by the Bi adatoms, which remained on the sample surface after the QD growth.…”

Section: Unique Growth Features Of In(ga)as Quantum Dots Using Bi As mentioning

confidence: 63%

“…Regarding QDs, ripening had attracted attention concerning the stability issue of II-VI QDs, since ripening proceeds even at room temperature for uncapped dots [43,44]. For III-V QDs, ripening phenomena have also been observed during growth interruption or annealing process, and various results have been reported [45][46][47][48][49]. Although the ripening phenomena were complex and highly dependent on the materials and growth conditions, unified understanding of this phenomenon has been given by Suemune et al, that the ripening phenomena are not intrinsic nature of materials but are originating from excess surface adatoms or originating from oxide on the surface [50].…”

Section: Unique Growth Features Of In(ga)as Quantum Dots Using Bi As mentioning

confidence: 99%

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Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

Okamoto¹

2016

JAN

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III-V and group IV semiconductor nanostructures such as quantum dots (QDs) are expected for various applications. In this study, effects of Bi supply during the deposition process on the self-organized nanostructure formation were examined for III-V and group IV semiconductor materials. It was found that Bi was successfully acted as a surfactant to form In(Ga)As QDs by MOVPE growth. By this method, QDs with superior optical quality were obtained. The unique features, such as ripening during the In(Ga)As QD formation and the phenomenon during the covering layer growth are discussed. As for the new approach on Ge-based nanostructure formation, high-density dot-like nanostructures were obtained by the low-temperature deposition sequence of Bi and Ge on SiO 2 substrates. As the formation mechanism has not been revealed yet, we suggest hypotheses for that of the Bi and Ge system.

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Section: Unique Growth Features Of In(ga)as Quantum Dots Using Bi As mentioning

confidence: 63%

Section: Unique Growth Features Of In(ga)as Quantum Dots Using Bi As mentioning

confidence: 99%

Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

Okamoto¹

2016

JAN

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“…A notable exception of the merely optical in situ approaches are the first MOVPE in situ STM images that were obtained at GaAs(100) surfaces at temperatures up to 650 °C and at atmospheric pressures . Even though the limited resolution is a drawback compared to STM at ambient or cryogenic temperatures, the in situ STM approach was also used to study quantum dot formation …”

Section: Epitaxial Reference Surfacesmentioning

confidence: 99%

“…Interesting in situ approaches include in situ photoluminescence (PL), which was demonstrated to predict the emission wavelength of InGaN QW‐based light emitting diodes (LEDs) already during growth . Ostwald ripening of InAs quantum dots on GaAs(100) could be observed with in situ STM, and a combined RAS/in situ STM study revealed the dependence of InGaAs quantum dot formation on different surface reconstructions . InGaAs quantum dot formation and island nucleation were studied also by in situ ellipsometry …”

Section: Epitaxial Reference Surfacesmentioning

confidence: 99%

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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“…4,5 Ripening of QDs for diode laser applications has been observed using in-situ scanning tunneling microscopy. 6 A higher surface diffusion in MOVPE, compared to MBE, induces a faster QD formation that can lead to island coalescence, and a bimodal QD size distribution. 7,8 Stacked layers have been employed in optoelectronic applications in order to enhance the three-dimensional confinement effects.…”

Section: Introductionmentioning

confidence: 99%

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Jakomin

Kawabata

Mourão

et al. 2014

Journal of Applied Physics

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Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy

Cited by 16 publications

References 12 publications

Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

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