Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Moret, Matthieu; Gil, Bernard; Ruffenach, Sandra; Briot, Olivier; Giesen, C.; Heuken, M.; Rushworth, S.; Leese, T.; Succi, M.

doi:10.1016/j.jcrysgro.2009.01.009

Cited by 63 publications

(28 citation statements)

References 20 publications

(19 reference statements)

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“…With decreasing growth temperature, a decreasing emission energy is observed corresponding to the higher indium incorporation in the QWs. 19) with a bowing parameter of 2.6 eV, which is close to the recently reported value by Moret et al 20 To take the strain induced shift of the bandgap energy into account, we used the relations given by Shan et al 21 with a linear interpolation of the elastic constants 22 and the deformation potentials. 23,24 The optical transition energies (including exciton binding energies) were then calculated for a QW thickness of 1.5 nm by numerically solving Schrö-dinger's equation assuming a band offset ratio of DE C / DE V ¼ 70:30 (Ref.…”

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confidence: 60%

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Jönen

Rossów

Bremers

et al. 2011

Applied Physics Letters

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We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on nonpolar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures. V C 2011 American Institute of Physics. [doi:10.1063/1.3607301] In the past few years, GaN-based light emitting devices grown on non-polar planes have continuously attracted increasing attention due to their promising optical properties. While conventional structures grown on the polar c-plane suffer from the quantum-confined Stark effect (QCSE), 1 GaN layers grown on non-polar surfaces are free from polarization fields in growth direction. 2 The increased transition probability may result in an improved device efficiency leading to increased light output powers and/or reduced threshold current densities. 3 Indeed, the first GaInN based laser diodes with an emission wavelength at 500 nm have been shown by Okamoto et al. on m-plane GaN substrates. 4 However, up to now, non-polar GaN substrates are still barely available, small in size, and also very expensive. As an alternative, several groups have reported heteroepitaxial growth of non-polar GaN layers on foreign substrates (c-LiAlO 2 , SiC, r-plane sapphire). [5][6][7] However, most of these structures were affected by high densities of threading dislocations (TDs) and basal plane stacking faults (BSFs), which are terminated by either prismatic stacking faults (PSFs) or partial dislocations. 8 While TDs are known to act as nonradiative recombination centers, BSFs are optically active since they can be considered as cubic (zincblende) ABC phases in the wurtzite ABAB stacking sequence. Such a structure forms a type-II heterojunction which may capture electrons and holes resulting in optical transitions below the wurtzite GaN bandgap energy. 9-11 More recently, a BSF related emission from aplane GaN/AlGaN quantum well (QW) structures was reported, suggesting the formation of quantum-wire-like states in the regions where BSFs intersect the QWs. 12,13 In this paper, we investigate the optical properties of m-plane GaInN/GaN QW structures grown on silicon carbide (SiC). In particular, we show that stacking faults intersecting the QWs dominate the optical properties of these structures.Our samples were grown on m-plane 6H-SiC, m-plane bulk GaN substrates, and a-plane GaN templates (grown by hydride vapor phase epitaxy) in a low pressure metalorganic vapor phase epitaxy system with a horizontal reactor (Aixtron AIX 200RF). The precursors used were trimethylgallium, triethylgallium, trimethylaluminum, trimethylindium,...

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confidence: 60%

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Jönen

Rossów

Bremers

et al. 2011

Applied Physics Letters

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“…For ternary nitride alloys, such as InGaN, consensus on the band gap as a function of composition has not been reached. A number of studies have measured the band gap as a function of In content, [45][46][47][48][49][50][51][52][53] resulting in a large spread in reported band gaps. Qualitatively, there is agreement that the band gap of InGaN is a nonlinear function of alloy composition.…”

Section: Alloys Ofmentioning

confidence: 99%

“…The various experimental [45][46][47][48][49][50][51][52][53] as well as theoretical [54][55][56][57][58][59][60][61][62][63][64] studies have disagreed on the magnitude of the bowing parameter.…”

Section: Alloys Ofmentioning

confidence: 99%

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

Moses

Miao

Yan

et al. 2011

The Journal of Chemical Physics

283

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Band gaps and band alignments for AlN, GaN, InN, and InGaN alloys are investigated using density functional theory with the with the Heyd-Scuseria-Ernzerhof {HSE06 [J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 134, 8207 (2003); 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In content is calculated and a strong bowing at low In content is found, described by bowing parameters 2.29 eV at 6.25% and 1.79 eV at 12.5%, indicating the band gap cannot be described by a single composition-independent bowing parameter. Valence-band maxima (VBM) and conduction-band minima (CBM) are aligned by combining bulk calculations with surface calculations for nonpolar surfaces. The influence of surface termination [(1100) mplane or (1120) a-plane] is thoroughly investigated. We find that for the relaxed surfaces of the binary nitrides the difference in electron affinities between m-and a-plane is less than 0.1 eV. The absolute electron affinities are found to strongly depend on the choice of XC functional. However, we find that relative alignments are less sensitive to the choice of XC functional. In particular, we find that relative alignments may be calculated based on Perdew-Becke-Ernzerhof [J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 134, 3865 (1996)] surface calculations with the HSE06 lattice parameters. For InGaN we find that the VBM is a linear function of In content and that the majority of the band-gap bowing is located in the CBM. Based on the calculated electron affinities we predict that InGaN will be suited for water splitting up to 50% In content.

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“…The calculated In content from the EL peak wavelength is different by more than 10% from the expected value from the RSM. This is maybe due to an ambiguity of the bowing parameter because various values for the bowing parameter, around 1.5-3, have been suggested [21,22]. Other possibilities are that (1) the deep-red electroluminescence originates from micro-scale In-rich regions generated by segregation of InGaN wells [23,24], and (2) various microfacets with different In incorporation efficiency appeared during the growth of MQWs because the surface of the sample was not flat; in any of these cases, XRD cannot detect these trends in the layers especially when the layer is thin such as in MQWs.…”

Section: Structural and Electroluminescence Properties Of Deep-red Ledsmentioning

confidence: 99%

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

Ohkawa

Watanabe

Sakamoto

et al. 2012

Journal of Crystal Growth

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Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Cited by 63 publications

References 20 publications

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

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