Optical, spectral, and thermal characteristics of InGaN/GaN green flip-chip light-emitting diodes

Temperature‐dependent optical, spectral, and thermal characteristics of InGaN/GaN near‐ultraviolet light‐emitting diodes

“…For the ternary alloy materials and multi‐stack‐layers (i.e., MQWs), their thermal conductivities were calculated by considering alloy scattering and anisotropic characteristics. The detail process to obtain their thermal conductivities was discussed in our previous studies . The thermal conductivities of Al 0.2 Ga 0.8 N and In 0.025 Ga 0.975 N were estimated to be 5.06 and 39.12 W m −1 K −1 , respectively.…”

Porous Formation in p-Type Gallium Nitride Films via 50 Hz Operated Alternating Current-Assisted Photo-Electrochemical Etching in Methanol-Sulfuric Acid Solution

“…1 The wide bandgap gallium nitride (GaN) has long been recognized in the realm of lighting technology as fundamental building blocks for LEDs. 2 Nevertheless, an enthusiasm to achieving a greater breakthrough in the development of GaN-based LEDs has been confronted with high defect generation in the GaN film, owing to a dissimilarity in lattice parameter and thermal expansion coefficient between the GaN and underlying substrate materials (silicon, silicon carbide, sapphire). 3,4 Preliminary approach by inducing pore morphology in the GaN film as a reservoir for mismatch dislocations has shed some lights in accommodating additional strain buildup due to the defect generation.…”