Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route

Lim, Way Foong; Quah, Hock Jin; Hassan, Z.; Radzali, Rosfariza; Zainal, N.; Yam, F.K.

doi:10.1016/j.jallcom.2015.07.114

Cited by 22 publications

(11 citation statements)

References 67 publications

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“…A dependence of optical absorption on energy gap can be deduced as:

α h v = A {(h v - E_{normalg})}^{normalm}

where α, h , and v is absorption coefficient, Planck's constant, and frequency, respectively . The m was 1/2 for direct band gap . Smaller direct band gap ( E g ) values (2.864–3.048 eV) (Fig.…”

Section: Resultsmentioning

confidence: 95%

“…Nonetheless, issues related to defect generation and/or dislocations either in the Al x In y Ga 1‐ x ‐ y N layer or overgrown layers are unavoidable . To circumvent these issues, an alteration of Al x In y Ga 1‐ x ‐ y N surface structure through pore formation has been attempted using UV‐assisted photoelectrochemical (PEC) etching in different diluted potassium hydroxide (KOH) concentrations (1%, 2%, 3%, and 4%) and different current densities (20, 40, 80, and 160 mA/cm 2 ) in a fixed 1% KOH solution . PL enhancement was shown for the porous films comparing to the nonporous film.…”

Section: Introductionmentioning

confidence: 99%

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Porous Quaternary Al_0.1In_0.1Ga_0.8N Film Formation via Photoelectrochemical Etching in HF:C₂H₅OH Electrolyte

et al. 2016

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Pore formation in AlInGaN films using photoelectrochemical etching in different volume ratios of hydrofluoric acid:ethanol solution (1:1, 1:2, 1:3, and 1:4) has been investigated structurally, morphologically, and optically. A significant increase in root mean square roughness and photoluminescence intensity in AlInGaN film etched in 1:1 solution has yielded the highest pore density and the largest average pore size in the film. Moreover, the acquisition of the lowest total dislocation density as well as the largest in-plane biaxial stress relaxation in the film suggested potential use of the porous film as a template to grow subsequent layers for development of light-emitting diodes.

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“…A dependence of optical absorption on energy gap can be deduced as:

α h v = A {(h v - E_{normalg})}^{normalm}

Section: Resultsmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Porous Quaternary Al_0.1In_0.1Ga_0.8N Film Formation via Photoelectrochemical Etching in HF:C₂H₅OH Electrolyte

et al. 2016

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“…The estimated values of steepness parameters and the strength of the electron-phonon interaction are listed in Table 2. The decrease in the E U values with increasing annealing temperature is associated with the decrease in localized states originated from the non-radiative recombination [50]. As from XRD analysis, the crystallinity increases with increasing annealing temperature, minimize localized states which may be resulted either from a decrease in the vacancies or dislocation defects of the films.…”

Section: Absorption Band Tailmentioning

confidence: 90%

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

et al. 2019

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The ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24-3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

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“…Catalysts 2021, 11, x FOR PEER REVIEW 13 of 18 ready reported for ZnO [47,48], the broad band centred at 610 nm detected for CZ20 was attributed to a defect-related emission, with the high intensity likely reflecting the different size of ZnO-based nanostructures compared to the other samples (Figure 12). Besides the introduction of visible-emitting defects, it is also possible that the presence of surface-bound C-based compounds had a preferential passivating effect over the non-radiative emission upon recombination events.…”

Section: Effect Of Ce-doping On the Functional And Optical Behaviourmentioning

confidence: 90%

Structural and Functional Behaviour of Ce-Doped Wide-Bandgap Semiconductors for Photo-Catalytic Applications

et al. 2021

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Increasing the photocatalytic efficiency of earth-abundant wide-bandgap semiconductors is of high interest for the development of cheap but effective light-driven chemical conversion processes. In this study, the coupling of ZnO and TiO2 with low contents of the rare-earth Ce species aimed to assess the photo-catalytic performance of the two semiconductors (SC). Structural and optical characterizations were performed to estimate the effect of the different interactions between Zn2+, Ti4+ and Ce4+ ions, and how the photo-responsive behaviour of Ce-Ti and Ce-Zn composites was affected. Therefore, photo-catalytic tests were performed for all Ce-modified SC to assess both their photo-oxidative and photo-reductive properties. Amongst all the tested materials, only Zn-based samples resulted in being suitable for the photo-oxidation of the methylene blue (MB) organic pollutant in a synthetic-dependent fashion.

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Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route

Cited by 22 publications

References 67 publications

Porous Quaternary Al_0.1In_0.1Ga_0.8N Film Formation via Photoelectrochemical Etching in HF:C₂H₅OH Electrolyte

Porous Quaternary Al_0.1In_0.1Ga_0.8N Film Formation via Photoelectrochemical Etching in HF:C₂H₅OH Electrolyte

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

Structural and Functional Behaviour of Ce-Doped Wide-Bandgap Semiconductors for Photo-Catalytic Applications

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Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route

Cited by 22 publications

References 67 publications

Porous Quaternary Al0.1In0.1Ga0.8N Film Formation via Photoelectrochemical Etching in HF:C2H5OH Electrolyte

Porous Quaternary Al0.1In0.1Ga0.8N Film Formation via Photoelectrochemical Etching in HF:C2H5OH Electrolyte

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

Structural and Functional Behaviour of Ce-Doped Wide-Bandgap Semiconductors for Photo-Catalytic Applications

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Porous Quaternary Al_0.1In_0.1Ga_0.8N Film Formation via Photoelectrochemical Etching in HF:C₂H₅OH Electrolyte

Porous Quaternary Al_0.1In_0.1Ga_0.8N Film Formation via Photoelectrochemical Etching in HF:C₂H₅OH Electrolyte