Optical spectra of (1‐101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate

Abstract

PACS 78. 45.+h, 78.55.Cr, 78.67.De, 81.15.Gh InGaN/GaN and GaN/AlGaN MQW waveguides were fabricated on a (1-101) GaN facet grown on a 7-degree off oriented (001) Si substrates by MOVPE. We achieved uniform layers with less dislocation density and superior flatness by virtue of the low growth rate on the facet. Using a nitrogen laser as the excitation source, the optical gain spectra as a waveguide was evaluated. In the InGaN/GaN MQW structure, we found that the optical gain was as high as +40cm -1 at near band edge emission peak. The GaN edge emission peak showed narrowing by high intensity excitation: the full width at half-maximum 1.8 nm at under 4.5 MW/cm 2 at 77 K.

Mg doping in (11¯01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE

“…As a result, we achieved a flat (1 1 0 1)GaN layer without cracks on the Si substrate [4]. By virtue of the low growth rate, the (1 1 0 1) surface was very smooth and the quality of the hetero-interface was much improved as compared to those grown on a (0 0 0 1) surface [5]. Furthermore, the (1 1 0 1) surface was terminated by nitrogen, and the behavior of impurity incorporation was different from that on the (0 0 0 1) Ga-face.…”

Selective growth and impurity incorporation in semipolar GaN grown on Si substrate

“…Therefore the wafer size of the semipolar material is limited to ten millimeters. We have attempted HVPE growth of semioplar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and non-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) GaN on Si substrate [21,22]. In the HVPE growth of GaN on Si, the reaction of GaN with Si has been the issue [23].…”

“…This is a good sign of the high optical performance of the GaInN/GaN heterostructure. Actually, optical spectra of a GaN/GaInN/GaN quantum well waveguide structure showed sharp threshold at the absorption edge and high optical gain near the band edge energy [12].…”

Time‐resolved spectroscopy in an undoped GaN (1‐101)

“…Since the (1-101) surface has slow growth rate and is more stable than the (0001) surface, the surface is more smooth than those obtained on a (0001) surface. The TEM analyses showed low dislocation density and an AlGaN/GaN or an InGaN/GaN heterostructure fabricated on the (1-101) face exhibited the excellent optical properties [4].…”