Selective growth and impurity incorporation in semipolar GaN grown on Si substrate

Abstract

Semipolar nitrogen terminated (1-101)GaN film was grown on a patterned (001)Si substrate using selective area metal organic vapor phase epitaxy. By using a high temperature grown AlN buffer layer upon oblique (111) Si facets on the substrate, we achieved a GaN crystal film with low dislocation density. Because the growth of GaN crystal was selforganized on the facets, we achieved two dimensional growth mode automatically, and the surface roughness was as small as 0.2nm. Incorporation of magnesium (Mg) and carbon (C) in the (1-101) GaN was studied extensively. It was found that the Mg doping efficiency is superior on (1-101) face to that on (0001) face. In case of C doping, a shallow acceptor level was generated in (1-101) face and p-type conduction was realized.

High-Bandwidth Green Semipolar (20–21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication

“…Since 2000, the progress of epitaxial processes for manufacturing nonpolar and semipolar structures can be divided on the basis of heteroepitaxy on substrates like sapphire, Si, SiC, and free-standing bulk GaN substrates . Subsequently, epitaxial lateral overgrowth (ELOG) and orientation controlling epitaxy (OCE) are investigated for growing semipolar GaN with large-area by patterned substrates. , Recent progress in heteroepitaxy has been achieved with selective area growth (SAG) of semipolar GaN from the inclined sidewall on striped sapphire or Si substratum. , It is theoretically possible to access any orientation of GaN on large-size foreign substrates by SAG . However, the semipolar and nonpolar GaN grown by OCE or SAG still produces stacking faults (SFs) with a certain magnitude of defect density, while GaN coalesces to form a continuous film.…”