Optical second-harmonic generation induced by a dc electric field at the Si–SiO_2 interface

Aktsipetrov, O.A.; Fedyanin, Andrey A.; Golovkina, V.; Murzina, T. V.

doi:10.1364/ol.19.001450

Cited by 84 publications

(70 citation statements)

References 6 publications

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“…For the normal-incidence transmission geometry used in our experiments, a completely anisotropic SHG signal was measured, in agreement with theory. 5 The azimuthal rotational curves remained completely anisotropic for the applied biases, 18 as was expected from symmetry reasons. Thus all the bias dependences were measured at the maximum of the rotational anisotropy.…”

Section: A Experimental Resultsmentioning

confidence: 83%

“…Deviations from a parabolic bias dependence were already observed, that were attributed to carrier degeneracy 17 and to mobile charges. 18 In a more realistic approach to EISH the nonlinear interference of dc-induced and field-independent contributions to the nonlinear polarization as well as retardation effects in the nonlinear response should be taken into account. The latter cannot be ignored for several reasons.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the investigation of the EISH in metal-oxide-semiconductor ͑MOS͒ structures, that was demonstrated in Ref. 18 and recently extended to the planar MOS structures with semitransparent gate electrodes, 19,20 seems very promising.…”

Section: Introductionmentioning

confidence: 99%

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dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures

et al. 1996

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The mechanism of dc-electric-field-induced second-harmonic generation ͑EISH͒ was studied at the buried Si͑111͒-SiO 2 interface in transmission through a planar Si-SiO 2 -Cr MOS structure. The second-harmonic contribution of the field-induced quadratic polarization generated in the space-charge region is determined. The role of the spatial distribution of the dc electric field inside the silicon space-charge region is demonstrated, as well as the influence of the oxide thickness. We have developed a phenomenological model of the EISH taking into account the interference between field-dependent and field-independent contributions to the nonlinear polarization ͑nonlinear interference͒ as well as the retardation of the EISH wave. We show that, due to these interference effects, the minima of the EISH curves do not coincide with the flatband voltage.

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Section: A Experimental Resultsmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

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dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures

et al. 1996

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“…Moreover one can break the inversion symmetry by an external influence such as electric and magnetic field causing so-called field induced second harmonic generation. [7][8][9] It has been demonstrated recently both theoretically and experimentally [10,11] that DC electric current flowing in the plane of a centrosymetric semiconductor can break the symmetry of the electron density distribution, resulting in current-induced SHG (CSHG) which can overwhelm conventional electric-field-induced mechanism if the conductivity of the probed material is sufficiently high. Moreover, theoretical predictions [11] made almost a decade before the advent of graphene demonstrate the possibility of the SHG enhancement by 1∼2 orders of magnitude in case of ballistic electron transport and in case of two-dimensional nature of the investigated electron system.…”

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confidence: 99%

Second harmonic generation in multilayer graphene induced by direct electric current

et al. 2012

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Optical second harmonic generation (SHG) is studied from multilayer graphene films in the presence of DC electric current flowing in the sample plane. Graphene layers are manufactured by chemical vapour deposition (CVD) technique and deposited on an oxidised Si(001) substrate. SHG intensity from graphene layer is found to be negligible in the absence of the DC current, while it increases dramatically with the application of the electric current. The current-induced change of the SHG intensity rises linearly with the current amplitude and changes its sign under the reversal of the current direction to the opposite. The observed effect is explained in terms of the interference of second harmonic radiation reflected from the Si surface and that induced by the DC current in multilayer graphene.Since its first experimental realisation in 2004 graphene continues to attract enhanced interest as a prospective material for both fundamental and applied science. Fascinating electronic properties which include electric fieldeffect[1], "chiral" quantum Hall effects [2,3], prospects for spintronics [4] and valeytronics [5] immediately pushed graphene research to the cutting edge of modern nanomaterial science and technology. Among the numerous problems currently being studied for graphene is the possible connection between the electron transport and the nonlinear-optical response. The importance of this task is dictated not only by needs of the applied research as allows distant probing of the electron flow in graphene devices but, perhaps, more importantly as a route to gain new comprehensive insight into its fundamental electronic properties.Second harmonic generation (SHG) is among the most ubiquitous methods used for probing surfaces and interfaces of centrosymmetric materials.[6] High sensitivity to the surface and thin film properties arises from SHG being prohibited in the electric dipole approximation in the volume of a centrosymmetric medium. As a result it is generated basically at surfaces and interfaces where the central symmetry is broken. Moreover one can break the inversion symmetry by an external influence such as electric and magnetic field causing so-called field induced second harmonic generation. [7][8][9] It has been demonstrated recently both theoretically and experimentally [10,11] that DC electric current flowing in the plane of a centrosymetric semiconductor can break the symmetry of the electron density distribution, resulting in current-induced SHG (CSHG) which can overwhelm conventional electric-field-induced mechanism if the conductivity of the probed material is sufficiently high. Moreover, theoretical predictions[11] made almost a decade before the advent of graphene demonstrate the possibility of the SHG enhancement by 1∼2 orders of magnitude in case of ballistic electron transport and in case of two-dimensional nature of the investigated electron system. In this paper we report the first investigation of current-induced second harmonic generation in multilayer graphene under ambient conditions...

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“…Ti:sapphire lasers generating 100 fs pulses of about 10 nJ pulse energy, however, were enabled to measure internal electric fields in crystalline silicon via EFISH generation. [16][17][18][19] This technique does not require an external probe. It suffers, however, from a residual invasiveness as long as the laser energy is larger than the Si band gap.…”

mentioning

confidence: 99%

Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene

Nagel¹,

Meyer²,

Heiliger³

et al. 1998

Applied Physics Letters

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We report the application of electric field-induced second-harmonic ͑EFISH͒ generation for time-resolved measurement of ultra-fast electrical pulses propagating on thin-film microstrip lines fabricated with a polymer based on benzocyclobutene as a dielectric layer on a silicon substrate. This contactless field detection enables the characterization of electric pulses on the transmission line up to 1.95 THz. In comparison to external electro-optic sampling the EFISH technique provides a better characterization tool concerning time-resolution and noninvasiveness.

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Optical second-harmonic generation induced by a dc electric field at the Si–SiO_2 interface

Cited by 84 publications

References 6 publications

dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures

dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures

Second harmonic generation in multilayer graphene induced by direct electric current

Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene

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