Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene

Abstract

We report the application of electric field-induced second-harmonic ͑EFISH͒ generation for time-resolved measurement of ultra-fast electrical pulses propagating on thin-film microstrip lines fabricated with a polymer based on benzocyclobutene as a dielectric layer on a silicon substrate. This contactless field detection enables the characterization of electric pulses on the transmission line up to 1.95 THz. In comparison to external electro-optic sampling the EFISH technique provides a better characterization tool concerning time-resolution and noninvasiveness.

Optical second harmonic spectroscopy of semiconductor surfaces: advances in microscopic understanding

“…In high-speed devices, transient fields have been characterized with subpicosecond time resolution by time-resolved EFISH generation. 13,59,60 Static fields have been characterized with submicron spatial resolution by scanning confocal EFISH microscopy. …”

A new class of improved‐efficiency THz filters for on‐chip detection of biomaterials

“…They deposited microdroplets of DNA onto a resonant thin-film microstrip line [2] whose resonance frequency shifts, depending upon the different dielectric constants [3][4][5] of the deposited specimen. In principle, this new approach promises gene-detection schemes that work without any markers (such as fluorescent molecules) and are therefore less expensive and potentially less erroneous than established methods [6,7].…”

Coherent and ultrafast optoelectronics in III–V semiconductor compounds

“…Hence, BCB-based TFMSLs have been used at cryogenic temperatures [60] and in various fluid environments [57,59]. Another attractive property of BCB is its applicability as transducer material to optically probe the electric field of a THz signal transmitted through a TFMSL by electric field induced second-harmonic (EFISH) generation [61]. Figure 8 displays the configuration considered here with a LT-GaAs PC switch integrated into a TFMSL using the method of Fig.…”

“…This lifetime is required for the realization e.g. of ultrafast THz emitters [36], generators for ultrafast electrical pulses [37], THz detectors or devices for down-converting CW light from laser diodes down to the THz frequency range via frequency mixing [38]. For generators of THz radiation the energy of the emitted radiation is provided by the static electric field in the optically excited semiconductor.…”

“…The BCB dielectric layer has a thickness of 12 µm. Further details of fabrication have been described in [61]. For time-domain EFISH measurements a mode-locked Ti:sapphire laser emitting 100 fs optical pulses at 805 nm wavelength with a repetition rate of 75.6 MHz is applied.…”