Optical ridge waveguides in 4H-SiC single crystal produced by combination of carbon ion irradiation and femtosecond laser ablation

Luan, Qingfang; Jia, Yuechen; Wang, Yutian; Akhmadaliev, Shavkat; Zhou, Shengqiang; Aldana, Javier R. Vázquez de; Tan, Yang; Chen, Feng

doi:10.1364/ome.4.001166

Cited by 6 publications

(3 citation statements)

References 25 publications

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“…To construct 2D ridge waveguides, swift heavy ion irradiation or ion implantation must be combined with other technique, such as wet or dry etching [17], diamond blade dicing [18], and laser ablation, to remove certain parts of the planar waveguides in order to achieve refractive index contrast along the horizontal direction for light field confinement. The combination of laser ablation and swift heavy ion irradiation has been implemented in several materials to manufacture ridges with high quality [19,20]. As for upconversion emission in waveguide, Liu et al have reported on the green upconversion pumped by 800-nm laser in planar waveguide based on Er 3+ /MgO codoped LiNbO 3 crystal [21].…”

Section: Introductionmentioning

confidence: 99%

Optical ridge waveguides in Er3+/Yb3+ co-doped phosphate glass produced by ion irradiation combined with femtosecond laser ablation for guided-wave green and red upconversion emissions

Chen

Tan

et al. 2016

Optical Materials

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This work reports on the fabrication of ridge waveguides in Er 3+ /Yb 3+ co-doped phosphate glass by the combination of femtosecond laser ablation and following swift carbon ion irradiation. The guiding properties of waveguides have been investigated at 633 and 1064 nm through end face coupling arrangement. The refractive index profile on the cross section of the waveguide has been constructed. The propagation losses can be reduced considerably after annealing treatment. Under the optical pump laser at 980 nm, the upconversion emission of both green and red fluorescence has been realized through the ridge waveguide structures.

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Section: Introductionmentioning

confidence: 99%

Optical ridge waveguides in Er3+/Yb3+ co-doped phosphate glass produced by ion irradiation combined with femtosecond laser ablation for guided-wave green and red upconversion emissions

Chen

Tan

et al. 2016

Optical Materials

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“…Therefore, femtosecond pulsed laser ablation is superior when ablating ultrahard and hard-to-etch materials such as SiC. So far, the femtosecond laser micromachining technique has shown success in ablating SiC films on Si substrates for MEMS devices [27], optical ridge waveguide formation [28], in-air throughhole fabrication in SiC substrates [29], and alcohol-assisted through-hole drilling in SiC [30]. However, the SiC MEMS devices fabricated by femtosecond laser micromachining were restricted to the surface thin film and the SiC throughwafer studies were focused merely on the characterization of the via holes by single shot ablation.…”

Section: Journal Of Micromechanics and Microengineeringmentioning

confidence: 99%

Fabrication of through-wafer 3D microfluidics in silicon carbide using femtosecond laser

Huang

Liu

et al. 2017

J. Micromech. Microeng.

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We demonstrate a prototype through-wafer microfluidic structure in bulk silicon carbide (SiC) fabricated by femtosecond laser micromachining. The effects of laser fluence and scanning speed on the laser-affected zone are also investigated. Furthermore, the wettability of the laser-affected surface for the target liquid, mineral oil, is examined. Microchannels of various cross-sectional shapes are fabricated by the femtosecond laser and their effects on the liquid flow are simulated and compared. This fabrication approach offers a fast and efficient route to implement SiC-based through-wafer micro-structures, which are not able to be realized using other methods such as chemical etching. The flexibility of manufacturing 3D structures based on this fabrication method enables more complex structures as well. Smooth liquid flow in the microchannels of the bulk SiC substrate is presented. The work shown here paves a new way for various applications such as reliable microfluidic systems in a high-temperature, high radioactivity, and corrosive environment, and could be combined with SiC wafer-to-wafer bonding to realize a plethora of novel microelectromechanical (MEMS) structures.

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“…Nevertheless, it causes the modification of the surface refractive index and a change in the material phase structure when the femtosecond laser irradiates the sample. By controlling the specific parameters of femtosecond laser irradiation, self-assembled periodic nanostructures [23] and SiC optical waveguides [24,25] induced by femtosecond laser irradiation were observed. With the increase in laser fluence, the irradiated sample is melted and reshaped by laser ablation, forming micro-cracks and holes.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Quan,

Wang,

et al. 2024

Micromachines

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Silicon carbide (SiC) is widely used in many research fields because of its excellent properties. The femtosecond laser has been proven to be an effective method for achieving high-quality and high-efficiency SiC micromachining. In this article, the ablation mechanism irradiated on different surfaces of 6H-SiC by a single pulse under different energies was investigated. The changes in material elements and the geometric spatial distribution of the ablation pit were analyzed using micro-Raman spectroscopy, Energy Dispersive Spectrum (EDS), and an optical microscope, respectively. Moreover, the thresholds for structural transformation and modification zones of 6H-SiC on different surfaces were calculated based on the diameter of the ablation pits created by a femtosecond laser at different single-pulse energies. Experimental results show that the transformation thresholds of the Si surface and the C surface are 5.60 J/cm2 and 6.40 J/cm2, corresponding to the modification thresholds of 2.26 J/cm2 and 2.42 J/cm2, respectively. The Raman and EDS results reveal that there are no phase transformations or material changes on different surfaces of 6H-SiC at low energy, however, decomposition and oxidation occur and then accumulate into dense new phase material under high-energy laser irradiation. We found that the distribution of structural phase transformation is uneven from the center of the spot to the edge. The content of this research reveals the internal evolution mechanism of high-quality laser processing of hard material 6H-SiC. We expect that this research will contribute to the further development of SiC-based MEMS devices.

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Optical ridge waveguides in 4H-SiC single crystal produced by combination of carbon ion irradiation and femtosecond laser ablation

Cited by 6 publications

References 25 publications

Optical ridge waveguides in Er3+/Yb3+ co-doped phosphate glass produced by ion irradiation combined with femtosecond laser ablation for guided-wave green and red upconversion emissions

Optical ridge waveguides in Er3+/Yb3+ co-doped phosphate glass produced by ion irradiation combined with femtosecond laser ablation for guided-wave green and red upconversion emissions

Fabrication of through-wafer 3D microfluidics in silicon carbide using femtosecond laser

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

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