Optical reflection and transmission formulae for thin films

Tomlin, S G

doi:10.1088/0022-3727/1/12/312

Cited by 140 publications

(54 citation statements)

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“…This parameter is indicative of the amount of disorder in the film because it is a straightforward measure of the range of N-Si-N bond angles. 23 For the optical analysis we measured the transmittance and reflectance spectra with a Perkin-Elmer Lambda 9 UV-VIS-NIR spectrometer and calculated the refractive index (n) and extinction coefficient (k) by a method based on the work of Tomlin 24 and Hernández …”

Section: Methodsmentioning

confidence: 99%

Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method

Martínez

Prado

Mártil

et al. 1999

Journal of Applied Physics

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We analyze the effect of thermal processes on the optical properties ͑refractive index, optical gap, Tauc coefficient, and Urbach energy͒ of SiN x :H films. Films with three different nitrogen to silicon ratios (xϭ0.97, xϭ1.43, and xϭ1.55, respectively͒ were deposited by a chemical vapor deposition technique assisted by an electron cyclotron resonance generated plasma. After deposition they were subjected to rapid thermal annealing at temperatures ranging from 300°C to 1050°C. We found that the percolation threshold for Si-Si bonds ͑at xϭ1.1) separates films with different response to thermal treatments. The changes of the Tauc coefficient and the Urbach energy at moderate annealing temperatures indicate a structural relaxation of the network for the films with x above the percolation threshold, while at higher temperatures the trends are inverted. In the case of x below the percolation limit the inversion point is not observed. These trends are well correlated with the width of the Si-N infrared stretching absorption band. Additionally the samples with as-grown x ϭ1.43 show a good correlation between the Urbach energy and the density of unpaired spins in silicon dangling bonds.

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Section: Methodsmentioning

confidence: 99%

Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method

Martínez

Prado

Mártil

et al. 1999

Journal of Applied Physics

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“…Tomlin (1968) simplified these expressions for absorbing films on non-absorbing substrates and expressed them as …”

Section: Absorption Coefficient and Band Gap Energymentioning

confidence: 99%

Effect of thickness on the optical properties of Gaas thin films

Das

Begum

et al. 2013

J Bangladesh Acad Sci

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Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10 -4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm.Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 -2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased.

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“…The inspection of Eqs. ͑A10͒-͑A12͒ shows that the function (1ϪR g )/T is almost free of interference fringes 18 and is, thus, suitable to solve ␣ f (E). This approach makes it possible to calculate values of ␣ f in the spectral region, where ␣ f d f у0.05.…”

Section: Imaginary Part Of the Index Of Refraction From The Region Ofmentioning

confidence: 99%

Optical absorption and light scattering in microcrystalline silicon thin films and solar cells

Poruba

Fejfar

Remeš

et al. 2000

Journal of Applied Physics

247

148

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Optical characterization methods were applied to a series of microcrystalline silicon thin films and solar cells deposited by the very high frequency glow discharge technique. Bulk and surface light scattering effects were analyzed. A detailed theory for evaluation of the optical absorption coefficient ␣ from transmittance, reflectance and absorptance ͑with the help of constant photocurrent method͒ measurements in a broad spectral region is presented for the case of surface and bulk light scattering. The spectral dependence of ␣ is interpreted in terms of defect density, disorder, crystalline/amorphous fraction and material morphology. The enhanced light absorption in microcrystalline silicon films and solar cells is mainly due to a longer optical path as the result of an efficient diffuse light scattering at the textured film surface. This light scattering effect is a key characteristic of efficient thin-film-silicon solar cells.

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Optical reflection and transmission formulae for thin films

Cited by 140 publications

References 1 publication

Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method

Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method

Effect of thickness on the optical properties of Gaas thin films

Optical absorption and light scattering in microcrystalline silicon thin films and solar cells

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