Optical pumping in ferromagnet-semiconductor heterostructures: Magneto-optics and spin transport

Isakovic, A. F.; Carr, D. M.; Strand, J.; Schultz, Brian D.; Palmstrøm, C. J.; Crowell, P. A.

doi:10.1103/physrevb.64.161304

Cited by 52 publications

(39 citation statements)

References 16 publications

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“…The tunneling properties of a Schottky barrier were discussed by Meservey et al (1982); Gibson and Meservey (1985); Prins et al (1995);and Kreuzer et al (2002). The measured I-V curves display a complicated behavior (Hirohata et al, 2001;Isaković et al, 2001) which can be significantly affected by the interface (midgap) states at the Schottky barrier (Jonker et al, 1997). A theoretical explanation for this behavior is still lacking.…”

Section: Metallic Ferromagnet/semiconductor Junctionsmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Section: Metallic Ferromagnet/semiconductor Junctionsmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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“…Since that fi rst experiment, there have been many related studies [16,[24][25][26][75][76][77][78][79][80][81][82][83][84][85][86]. Taniyama et al [78], Steinmuller et al [79] and Park et al [86] measured the spin-dependent photocurrent for Fe/AlO x /GaAs, NiFe(Fe)/GaAs and Fe/MgO/GaAs interfaces, respectively, under forward bias with optical spin orientation.…”

Section: Experimental Studies Of Spin Transport Into Ferromagnetsmentioning

confidence: 99%

Electrical and optical spin injection in ferromagnet/semiconductor heterostructures

et al. 2011

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T he operation of the rapidly expanding range of electronic devices, such as personal computers and mobile phones, is primarily based on the control of electron charge in semiconductors. Although the tremendous progress in microfabrication technologies has accelerated the miniaturization of electronic devices, the size of devices will soon encounter the fundamental physical limits of that miniaturization. Further scale reduction beyond these limits will require a radical alteration of the concept of functional devices. Control of the spin degree of freedom of an electron has brought about a new era of integration in electronics over the last ten years, and research in the fi eld of 'spintronics' is currently being pursued extensively due to the potential of this approach for the development of a new direction in electronics. Th e fi eld of spintronics spreads beyond the traditional boundaries among research fi elds, leading to interdisciplinary research that spans magnetism, semiconductors, photonics and electronics.Since 1990, a number of spin-based device concepts have been proposed. Spin-based transistors [1][2][3][4][5], spin light-emitting diodes (spin-LEDs) [6,7] and spin transfer torque memories [8,9] are typical examples. One of the device concepts is depicted in Figure 1, where the device structure consists of a ferromagnetic source electrode, a highmobility semiconductor channel, a ferromagnetic drain electrode and a gate electrode. To operate a spin-based functional device, the primary issue is the effi cient injection of spin-polarized electrons from the source ferromagnet into the semiconductor channel across the interface. Th e electron spin is then manipulated by the application of a voltage via the gate electrode [10], and the spin orientation is detected using a ferromagnetic drain electrode in a spin fi eld-eff ect transistor (FET) or from the circular polarization of light emission in a spin-LED. Although the device concept is very simple and similar to that of a conventional FET, the implementation of spin-based devices is not that straightforward: the spin degree of freedom must be handled very delicately because the spin current rapidly depolarizes at the ferromagnet/semiconductor interface and the spin information will be lost within a time scale of several hundred picoseconds, even in a semiconductor [11,12]. Th is is in clear contrast to the conservation of electron charge. Th erefore, there are still obstacles to overcome in the implementation of such spintronic devices, and for this purpose a clear understanding of not only electron spin transport processes from a ferromagnet into a semiconductor, and vice versa, but also electron spin dynamics in semiconductors, is of fundamental and technological importance.Our focus in this article is on reviewing the current status of this subject with special emphasis on electrical and optical spin injection Spin-based electronics or 'spintronics' is a rapidly expanding research area that off ers the promise of surpassing the limits of conventiona...

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“…These materials are also of interest for spintronics application due to an important role of spin polarization of carriers in transport and optical phenomena and relatively high Curie temperatures T in them [1][2][3]. Ferromagnet/semiconductor (FM/SC) hybrid structures [3] based on DMSs of c III-V groups deserved a special attention due to their quite unusual magnetic and transport properties particularly caused by magnetic proximity effects which exerted a crucial influence in these systems [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Pecularities of Hall effect in GaAs/δ〈Mn〉/GaAs/InxGa1−xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content

et al. 2012

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Transport properties of GaAs/δ/GaAs/In x Ga 1-x As/GaAs structures containing In x Ga 1-x As (х ≈ 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness d s = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence R xx (T) at the temperature ≈ 46К which is usually associated with the Curie temperature T C of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes p H in QW does not decrease below T C as one ordinary expects in similar systems. On the contrary, the dependence p H (T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than d s is smaller and reaches a giant value p H = (1-2)⋅10 13 cm -2 . Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high p H value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.2

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Optical pumping in ferromagnet-semiconductor heterostructures: Magneto-optics and spin transport

Cited by 52 publications

References 16 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

Electrical and optical spin injection in ferromagnet/semiconductor heterostructures

Pecularities of Hall effect in GaAs/δ〈Mn〉/GaAs/InxGa1−xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content

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