Optical properties of β-Si3N4 single crystals grown from a Si melt in N2

Munakata, Fumio; Matsuo, Kazuyuki; Furuya, Kenji; Akimune, Yoshio; Ye, J.; Ishikawa, Izumi

doi:10.1063/1.124142

Cited by 83 publications

(66 citation statements)

References 5 publications

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“…15,16 We have reported, for the first time, ferromagnetism above room temperature ͑RT͒ in Mn/ Si 3 N 4 multilayered films. 17 The structural and electronic properties of few samples were studied by x-ray absorption spectroscopy ͑XAS͒ and x-ray magnetic circular dichroism, indicating the presence of a distorted noncentrosymmetric Mn 3 N 2 phase with slightly shorter Mn-N distances, which was proposed to be the origin of the ferromagnetism in this system.…”

Section: Introductionmentioning

confidence: 87%

Induced ferromagnetism in Mn3N2 phase embedded in Mn/Si3N4 multilayers

Céspedes

Román

Huttel

et al. 2009

Journal of Applied Physics

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Room temperature ferromagnetism has been obtained for different sets of Mn/ Si 3 N 4 multilayers prepared by sputtering. In order to find the most suitable conditions to stabilize the ferromagnetic ordering in this system, the evolution of the magnetic properties has been studied for films in which the Si 3 N 4 layer thickness was maintained constant while that of the Mn layer was varied, ͓Mn͑t m ͒ / Si 3 N 4 ͑3.4 nm͔͒ n , and conversely, in ͓Mn͑0.7 nm͒ / Si 3 N 4 ͑t sn ͔͒ 43 samples, in which the Mn layer thickness was kept constant while varying the Si 3 N 4 layer thickness. Structural, compositional, electronic and magnetic characterizations have been performed by means of x-ray reflectometry, Rutherford backscattering spectrometry, x-ray photoemission spectroscopy, x-ray absorption, and superconducting quantum interference device for further knowledge of the magnetic-structural relationship in this system. Our results show that the peculiar magnetic behavior of these films is mainly related to the stabilization of a slightly distorted Mn 3 N 2 phase that is induced by the Si 3 N 4 at the interfaces. For samples with larger Mn layer thickness, metallic Mn and Mn 3 N 2 phases coexist, which leads to a reduction of the total magnetization per Mn atom due to the presence of metallic Mn. For small Mn layer thickness ͑t m Ͻ 0.86 nm͒, where noncontinuous Mn 3 N 2 layers are formed, the magnetization decreases noticeably due to the superparamagnetic size limit. It has been found that the best conditions for the stabilization of the ferromagnetism in this system occur when both, the manganese-rich and the silicon nitride layers, are continuous and with similar thickness, close to 3.5 nm.

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Section: Introductionmentioning

confidence: 87%

Induced ferromagnetism in Mn3N2 phase embedded in Mn/Si3N4 multilayers

Céspedes

Román

Huttel

et al. 2009

Journal of Applied Physics

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“…The material is also a wide-band gap semiconductor with a band gap of 5.3 eV, in which the mid-gap levels can be introduced by doping for tailoring its electronic/optical properties [10,11]. To date, one-dimensional Si 3 N 4 nanostructures have been synthesized via different methods [12].…”

Section: Introductionmentioning

confidence: 99%

Mass production of very thin single-crystal silicon nitride nanobelts

Gao

Yang

et al. 2008

Journal of Solid State Chemistry

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“…Similar to III-N compounds such as GaN and AIN, Si 3 N 4 is also an excellent host material in terms of high dopant concentration, mechanical and thermal properties and chemical stabilities. It has been demonstrated that by introducing midgap levels into the wide band gap of 5.3 eV in nondoped Si 3 N 4 , the emission of green to ultraviolet light can be achieved [3][4][5][6]. The synthesis of Si 3 N 4 nanomaterials is of particular interest since they could be promising candidates for fabricating nanocomposites and electronic/optic nanodevices that can be operated at extreme conditions such as high temperatures, corrosive environments, high power and radiation environments.…”

Section: Introductionmentioning

confidence: 99%