Optical properties of β-In₂S₃and β-In₂S₃:Co²⁺single crystals

Abstract

β-In 2 S 3 and β-In 2 S 3 :Co 2+ single crystals were grown by the chemical transport reaction method using In 2 S 3 , S, and ZnS as starting materials and (ZnCl 2 + I 2 ) as a transport agent. The single crystals crystallized into a tetragonal structure. The indirect optical energy band gaps of the single crystals at 298 K were found to be 2.240 eV and 1.814 eV for β-In 2 S 3 and β-In 2 S 3 :Co 2+ , respectively. The direct optical energy band gaps were found to be 2.639 eV and 2.175 eV for β-In 2 S 3 and β-In 2 S 3 :Co 2+ , respectively. Impurity optical absorption peaks were observed for the β-In 2 S 3 :Co 2+ single crystal. These impurity absorption peaks were assigned, based on the crystal field theory, to the electron transitions between the energy levels of the Co 2+ ion sited in T d symmetry.

Effect of [Cu]/[Cu+In] ratio in the solution bath on the growth and physical properties of CuInS2 film using one-step electrodeposition

“…Samples (A) and (B) are solid mixtures of In 2 S 3 and CuInS 2 and samples (F) and (G) are solid mixtures of CuS and CuInS 2 . The band gaps of CuS and In 2 S 3 are about 2.58 eV and 2.6 eV, respectively[36,37]. The band gaps of samples (A) and (B) lie between the band gaps of CuInS 2 and In 2 S 3 and those of samples (F) and (G) lie between the band gaps of CuInS 2 and CuS, which agrees well with the XRD patterns.…”

Zero- and one-dimensional thioindates synthesized under solvothermal conditions yielding α-In2S3, β-In2S3 or MgIn2S4 as thermal decomposition products

“…Additionally, the crystal structures of a-or b-In 2 S 3 present a large amount of vacancies that can serve as host for a number of metal ions to form semiconducting and/or magnetic materials [12]. These structural and chemical features distinguish In 2 S 3 from II/VI compounds, which tend to expel guest ions [13], and offer possibilities for tuning the optical and electrical properties according to the type and concentration of the guest cations.…”

Lattice Thermal Expansion and Ionicity for III2–VI3 Binary Defect Tetrahedral Compound Semiconductors and Their Alloys

“…The interest for this binary group compounds has been renewed in the last few years in two respects: first, they, under particular growth conditions [5], may form as II-VI/III-V interfaces and modify the electronic properties of junctions such as in optoelectronics, radiation detectors, and electrical switching applications [6,7] and second, they have been successfully prepared in bulk [8,9] as well as nanoscale size crystals, nanowires, and thin films [10][11][12][13].…”