Optical properties of ZnSxSe1−x (x&lt;0.18) random and ordered alloys grown by metalorganic atomic layer epitaxy

Song, Jung-Hoon; Sim, Eundeok; Baek, Kyung Seon; Chang, S. K.

doi:10.1016/s0022-0248(00)00130-5

Cited by 25 publications

(13 citation statements)

References 14 publications

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“…Most commonly used for deposition of binary compounds, the atomic layer deposition (ALD) method can also be applied to growing ternary compounds or doped materials. [1][2][3][4][5][6][7][8][9][10] ALD operates at relatively low temperatures, allows for deposition into highly structured substrates, and usually allows for direct control of concentration through changing the ratio of number of cycles of each precursor. 11,12 Thus, ALD is an ideal method for creating a thin, highly conformal layer of doped material at low energy cost.…”

Section: Introductionmentioning

confidence: 99%

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Short

Jewell

Bielecki

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Multilayer film stacks of ZnS and Cu x S (x $ 2) were made via atomic layer deposition. The precursors were bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc, bis(2,2,6,6-tetramethyl-3,5heptanedionato)copper, and H 2 S generated in situ for sulfur. Samples were deposited at 200 C, in layers ranging from approximately 2 to 20 nm thick, based on binary growth rates. The properties of the film stacks were studied with atomic force microscopy, ultraviolet-visible spectroscopy, and extended x-ray absorption fine structure. The results demonstrate that the structure of films with the thinnest layers is dominated by Cu x S, whereas in the thicker films, the structure is determined by whichever material is first deposited. This can be attributed to the crystal structure mismatch of ZnS and Cu x S. V

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Section: Introductionmentioning

confidence: 99%

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Short

Jewell

Bielecki

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…Furthermore, electron affinity and electrical properties of these films can be tuned by changing the ratio of S to Se, which helps to enhance the blue response to the material [9]. Earlier, thin films of ZnS 1−x Se x have been prepared using molecular beam epitaxy [10,11], atomic layer epitaxy [12], high pressure sputtering [13], metal organic vapor epitaxy [14,15], metal organic chemical vapor deposition (MOCVD) [16], laser ablation [17], close space evaporation [6], spray pyrolysis [18], epitaxial growth [19], thermal evaporation [20], Successive Ionic Layer Adsorption and Reaction (SILLAR) [21], and soft chemical route technique [22][23][24], etc. ZnSe nanowires were synthesized by Sublimation Sandwich method (SSM) [25] and facile thermal vaporation method [26], Theoretical studies have also been carried out, wherein, Yu et al [27] performed ab initio calculations of the structural, dielectric and lattice properties of ZnX (X = O, S, Se and Te).…”

mentioning

confidence: 99%

Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

Sadekar

Ghule

Sharma

2011

Journal of Alloys and Compounds

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“…Thus, using the (0 0 2) reflection, the lattice parameter c can be calculated (double the associated d spacing, d = 3.2 Å). The obtained c parameter (6.4 Å) is found to be intermediate between the c parameters for ZnS (6.234 Å) and ZnSe (6.53 Å) (37), and using Vegard's rule (eq. [2], substitute a for c), x is found to be an intermediate value.…”

Section: Znse X S 1-x Nanoparticlesmentioning

confidence: 89%

Formation of group 12 [Zn, Cd] mixed-chalcogen nanoparticles from the reagent Me₃Si-SeS-SiMe₃

Turner¹,

Rösner²,

Huang³

et al. 2007

Can. J. Chem.

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Mixed-chalcogen metal chalcogenide nanoparticles (MSe x S 1-x ; M = Zn, Cd) have been synthesized using Me 3 Si-SeS-SiMe 3 as a delivery source of Se 2-and S 2-to the metal core. This method demonstrates the ease with which mixed-chalcogen particles can be fabricated at low temperature using colloidal techniques. Reaction with Me 3 Si-SeS-SiMe 3 occurs via a redox pathway resulting in Se-S bond cleavage and ultimately contributing to the nonequivalent Se:S ratio observed in the isolated particles. Subsequent thermolysis of ZnSe 0.57 S 0.43 and CdSe 0.28 S 0.72 in hexadecylamine gives rise to controlled particle growth while maintaining the observed stoichiometry. Particles are characterized by EDX, TEM, and powder X-ray diffraction analysis in conjunction with UV-vis absorption and photoluminescence (PL) spectroscopy.Résumé : On a effectué la synthèse de nanoparticules mixtes comportant un chalcogène et un chalcogénure métallique (MeSe x S l-x ; M = Zn, Cd) en utilisant le Me 3 Si-SeS-SiMe 3 comme source pouvant livrer les groupes Se 2-et S 2-au métal central. On a fait une démonstration de cette méthode par la facilité avec laquelle des particules de chalcogènes mixtes peuvent être fabriqués à basse température en faisant appel à des techniques colloïdales. La réaction avec le Me 3 Si-SeS-SiMe 3 se produit par une voie réactionnelle redox qui provoque un clivage de la liaison Se-S et qui contribue éventuellement au rapport non équivalent de Se:S qui est observé dans les particules qui ont été isolées. Une thermolyse subséquente du ZnSe 0,57 S 0,43 et du CdSe 0.28 S 0.72 dans l'hexadécylamine conduit à une croissance contrôlée des particules tout en maintenant la stoechiométrie observée. On a caractérisé les particules par le biais de la diffraction des rayons X par des poudres et les techniques « EDX » et « TEM » en relation avec les spectres d'absorption UV-vis et la spectroscopie de photoluminescence (PL).

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Optical properties of ZnSxSe1−x (x<0.18) random and ordered alloys grown by metalorganic atomic layer epitaxy

Cited by 25 publications

References 14 publications

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

Formation of group 12 [Zn, Cd] mixed-chalcogen nanoparticles from the reagent Me₃Si-SeS-SiMe₃

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Optical properties of ZnSxSe1−x (x<0.18) random and ordered alloys grown by metalorganic atomic layer epitaxy

Cited by 25 publications

References 14 publications

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

Formation of group 12 [Zn, Cd] mixed-chalcogen nanoparticles from the reagent Me3Si-SeS-SiMe3

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Formation of group 12 [Zn, Cd] mixed-chalcogen nanoparticles from the reagent Me₃Si-SeS-SiMe₃