Optical properties of zinc nitride formed by molten salt electrochemical process

Toyoura, Kazuaki; Tsujimura, Hiroyuki; Goto, Takuya; Hachiya, Kan; Hagiwara, Rika; Ito, Yasuhiko

doi:10.1016/j.tsf.2005.06.057

Cited by 80 publications

(49 citation statements)

References 11 publications

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“…It has been suggested that Zn 3 N 2 is easily hydrolyzed by air moisture. 27 Small amounts of Zn͑OH͒ 2 and ZnO were observed by Toyoura et al 28 on the outer surface of the zinc nitride formed by the molten salt electrochemical process in their work. Supposedly, the water came from the moisture adsorbed on the surface.…”

Section: Film Stability and Shelf Lifementioning

confidence: 86%

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

Lim

White

2009

Journal of Applied Physics

117

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Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn3N2) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm2 V−1 s−1 for the as-deposited film produced at 50 °C and 110 cm2 V−1 s−1 after annealing at 400 °C. In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium–gallium–zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.

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Section: Film Stability and Shelf Lifementioning

confidence: 86%

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

Lim

White

2009

Journal of Applied Physics

117

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“…α-Be 3 N 2 , β-Be 3 N 2 [194], Mg 3 N 2 , α-Ca 3 N 2 [190] and Zn 3 N 2 [195] are known to represent semiconductors. A decrease of the band gap value (obtained from experimental data) with increasing atomic weight is observed (α-Be 3 N 2 : direct band gap of 3.8 eV [196], Mg 3 N 2 : 2.80 eV, Ca 3 N 2 : 1.55 eV [190] and Zn 3 N 2 probably direct band gap of 1.01-1.25 eV [195,197]). Ammonothermal synthesis of nitrides with anti-bixbyite structure was only published for α-Be 3 N 2 , nevertheless it is a promising method for bulk growth, especially since most of the other established synthesize routes only yield micro crystalline powders or films and no bulk material, which is necessary for many applications as semiconducting material.…”

Section: Alkaline-earth Metal Nitridesmentioning

confidence: 99%

Chemistry of Ammonothermal Synthesis

2014

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Ammonothermal synthesis is a method for synthesis and crystal growth suitable for a large range of chemically different materials, such as nitrides (e.g., GaN, AlN), amides (e.g., LiNH 2 , Zn(NH 2 ) 2 ), imides (e.g., Th(NH) 2 ), ammoniates (e.g., Ga(NH 3 ) 3 F 3 , [Al(NH 3 ) 6 ]I 3 · NH 3 ) and non-nitrogen compounds like hydroxides, hydrogen sulfides and polychalcogenides (e.g., NaOH, LiHS, CaS, Cs 2 Te 5 ). In particular, large scale production of high quality crystals is possible, due to comparatively simple scalability of the experimental set-up. The ammonothermal method is defined as employing a heterogeneous reaction in ammonia as one homogenous fluid close to or in supercritical state. Three types of milieus may be applied during ammonothermal synthesis: ammonobasic, ammononeutral or ammonoacidic, evoked by the used starting materials and mineralizers, strongly influencing the obtained products. There is little known about the dissolution and materials transport processes or the deposition mechanisms during ammonothermal crystal growth. However, the initial results indicate the possible nature of different intermediate species present in the respective milieus. A Alkali or alkaline-earth metal, A(1) = alkali metal, A(2) = alkaline-earth metal B Further metal, might be main group metal, transition or rare-earth metal M Transition metal, excluding Sc, Y, La R Rare-earth metal, Sc, Y, La-Lu X Halide E Other main group element

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“…However, it is still difficult to obtain reproducible and reliable p-type ZnO due to its intrinsic defects [10]. Recently, zinc nitride is studied as a promising material [11], and it can be transformed into p-type ZnO [12][13].…”

Section: Introductionmentioning

confidence: 99%

“…Zinc nitride films were reported by some groups as a semiconductor with a direct band gap [14,15] and a cubic structure [11,16]. However, various values and different types of band gap have been reported.…”

Section: Introductionmentioning

confidence: 99%

“…However, various values and different types of band gap have been reported. In 2005, Toyoura et al [11] prepared zinc nitride films using molten salt electrochemical process, and they reported the band gap was 1.01-1.23 eV. In 2006, Zong et al [16] prepared zinc nitride films on quartz substrates through reactive rf magnetron sputtering, and the films had an indirect band gap of 2.12 eV.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural and optical properties of zinc nitride films prepared by rf magnetron sputtering

Yang

Zhang

et al. 2009

Applied Surface Science

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Optical properties of zinc nitride formed by molten salt electrochemical process

Cited by 80 publications

References 11 publications

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

Chemistry of Ammonothermal Synthesis

Structural and optical properties of zinc nitride films prepared by rf magnetron sputtering

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