Optical Properties of TlGaSeS Layered Single Crystals

Temperature- and excitation-dependent photoluminescence in TlGaSeS layered crystals

“…In this inset we also present the temperature dependence of the energy band gap, E g , for TlGaSeS crystals which was revealed in Ref. [11]. It is observable that this dependence is also nearly unchanged in the temperature range of 20-56 K.…”

“…A simple calculation with Eq. (3) for A-and B-bands emissions by using the values of E g = 2.334 eV [11], h A = 1.605 eV (h B = 1.254 eV) and E aA = 0.008 eV (E aB = 0.011 eV) gives us the energies of the deep donor levels E dA and E dB as 1.613 and 1.265 eV, respectively (Fig. 4).…”

“…A high photosensitivity in the visible range of spectra, high birefringence in conjunction with a wide transparency range of 0.5-14 m make these crystals useful for optoelectronic applications [10]. The optical properties of TlGaSeS layered single crystals have been investigated by measuring the transmission and reflection in the wavelength region between 400 and 1100 nm [11]. The indirect transitions with a band gap energy of 2.27 eV was established by means of the analysis of absorption data at room temperature.…”

Computational modeling of isothermal decay curves of trapping centers in TlGaSeS layered single crystals

“…These crystals are useful for optoelectronic applications as they have high photosensitivity in the visible range of the spectra and high birefringence in conjunction with a wide transparency range of 0.5-14.0 m [3][4][5][6][7][8][9][10].…”

Analysis of Thermoluminescence Glow Peaks in β-Irradiated TlGaSeS Crystals

“…In the crystal structure of TlGaSeS, Tl and Se(S) atoms are bonded with an interlayer type whereas bonding between Ga and Se(S) atoms is intralayer type. Optical indirect and direct band gap energies of TlGaSeS crystal were found experimentally as 2.27 eV and 2.58 eV, respectively [5].…”