Optical Properties of Substitutional Donors in ZnSe

Merz, J. L.; Kukimoto, Hiroshi; Nassau, K.; Shiever, J. W.

doi:10.1103/physrevb.6.545

Cited by 308 publications

(58 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It is clearly seen only in the PL spectrum integrated over the entire surface and its spectral position falls in the vicinity of the reflection curve minimum (figure 1e). With the precision of the order of the energy of longitudinal-transverse splitting (1.5 meV for bulk ZnSe [13]) this minimum coincides with the position of free exciton resonance [14]. Therefore we conclude that E hh peak is due to free exciton recombination in the sample areas of nominal thickness L z =11Å.…”

Section: Znse-zns Qw Structuresmentioning

confidence: 76%

Experimental Studies of the Recombination Processes in Ii-Vi Semiconductors (Bulk Crystals and Epilayers) at Variable Excitation Levels

Brodyn¹,

Shevel²,

Tishchenko³

1999

Condens. Matter Phys.

View full text Add to dashboard Cite

Low-temperature luminescence spectra under broad-scale variation of an excitation level I exc are studied for ZnS/ZnSe single quantum wells (QW) and for CdS bulk crystals and epilayers. In the first case, the manifestations turn out to be of the heterointerface inhomogeneity -i.e. fluctuations of QW thickness. The position of the mobility edge for excitons localized by fluctuations is determined. In the second case the effect of the increase of I exc is systematically studied not only for excitonic but also for impurity-related edge luminescence. Contrary to the earlier and commonly assumed expectations, up to the highest I exc close to damage threshold no saturation of edge luminescence intensity was observed in bulk CdS crystals, whereas in a few thick epilayers such saturation did occur. The suggested qualitative explanation takes into account diffusion (non-diffusive transport) of carriers beyond the excited near-surface layer.

show abstract

Section: Znse-zns Qw Structuresmentioning

confidence: 76%

Experimental Studies of the Recombination Processes in Ii-Vi Semiconductors (Bulk Crystals and Epilayers) at Variable Excitation Levels

Brodyn¹,

Shevel²,

Tishchenko³

1999

Condens. Matter Phys.

View full text Add to dashboard Cite

show abstract

“…42 For semiconductor materials studied in the present study, the energy band gaps of bulk materials and optical bowing parameter have already been determined experimentally. 42 The effective masses of electrons and holes, m e * /m 0 and m h * /m 0 , for the unalloyed compounds have also reported in the previous papers; 8,[43][44][45][46][47][48][49] however, the values for intermediate compositions of the alloys have not yet been reported. Therefore, in the present calculation, the effective mass of alloys was assumed to be a mole fraction weighted mean effective mass of the two unalloyed compounds as a first approximation; for the AB x C 1 x pseudobinary alloys, the effective mass of the alloy at the composition x is expressed by the following equation:…”

Section: Calculationsmentioning

confidence: 82%

“…The parameters for the unalloyed bulk materials used in the present calculations are summarized in Table I. 8,29,32,43,[46][47][48][49][50][51][52][53][54] …”

Section: Calculationsmentioning

confidence: 99%

Design of cadmium-free colloidal II–VI semiconductor quantum dots exhibiting RGB emission

Asano

Omata

2017

AIP Advances

View full text Add to dashboard Cite

The size and composition dependence of the optical gap of colloidal alloyed quantum dots (QDs) of Zn(Te1−xSex) and Zn(Te1−xSx) were calculated by the finite-depth-well effective mass approximation method. QDs that exhibited red, green and blue emission were explored to develop cadmium-free II–VI chalcogenide-based QD-phosphors. We considered that highly monodisperse colloidal QDs with diameters of 3–6 nm are easy to synthesize and II–VI semiconductor QDs usually exhibit a Stokes shift ranging between 50 and 150 meV. We showed that Zn(Te1−xSex) QDs with 0.02≤x≤0.68, and 0≤x≤0.06, and 0.66≤x≤0.9 may be expected to exhibit green, and blue emission, respectively. Zn(Te1−xSx) QDs with 0.26≤x≤0.37, 0.01≤x≤0.2 and 0.45≤x≤0.61, 0≤x≤0.02, and 0.63≤x≤0.72, should give red, green and blue emission respectively. On the basis of our calculations, we showed that Zn(Te,Se) and Zn(Te,S) QDs are very promising cadmium-free II-VI chalcogenide semiconductor QD phosphors.

show abstract

“…This we conclude from the observation of weak PL bands attributed previously to neutral Cl donor bound exciton (DBE) recombination (I2 PL at 2.797 eV [7]) and donor-acceptor pair (DAP) transitions for Na (2.715 eV [8]) and Cu (2.631 eV [9] and 2.256 eV [10]) acceptors. Contaminant concentration is low, as concluded from relatively high intensity of the FE line.…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

Optical Properties of Molecular Beam Epitaxy Grown ZnSe on GaAs

Karpińska¹,

Suchocki²,

Godlewski³

et al. 1993

Acta Phys. Pol. A

View full text Add to dashboard Cite

Photoluminescence studies of molecular beam epitaxy grown ZnSe-on-GaAs layers are presented. Tle high sensitivity of the PL technique allowed for identification unintentional dopants in pure ZnSe sample. Characteristic photoluminescence lines due to extended defects were observed. The experimental results obtained show a correlation between intentional doping level and extended defects concentration. We conclude also that even though molecular beam epitaxy layers are grown at low temperature, the self-ckpensation mechanism may still be important. For heavily doped sample edge emission is deactivated likely due to efficient energy transfer link with deep donor-acceptor pair bands.

show abstract

Optical Properties of Substitutional Donors in ZnSe

Cited by 308 publications

References 16 publications

Experimental Studies of the Recombination Processes in Ii-Vi Semiconductors (Bulk Crystals and Epilayers) at Variable Excitation Levels

Experimental Studies of the Recombination Processes in Ii-Vi Semiconductors (Bulk Crystals and Epilayers) at Variable Excitation Levels

Design of cadmium-free colloidal II–VI semiconductor quantum dots exhibiting RGB emission

Optical Properties of Molecular Beam Epitaxy Grown ZnSe on GaAs

Contact Info

Product

Resources

About