Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD

Ultrafast spin dynamics in magnetic wide‐bandgap semiconductors

“…a). Binding energies of the neutral donor bound exciton of 6–7 meV and the positive donor bound exciton of 11.2 meV in GaN suggest their presence at a low temperature of T = 10 K. Interestingly, the observation of delocalized and localized electrons at high and low photon energies is also directly evident when analyzing the spin dephasing times in Fig. .…”

“…We observe a broad asymmetric emission centered at 3.490 eV at the well‐known position of the free excitons A, B, and C in GaN. The three lines are not resolved, possibly due to lattice strain . The bound neutral exciton (D 0 X) occurs at a slightly smaller energy around 3.47 eV compared to the free excitons FX A , FX B , and FX C .…”

Growth of good quality InGaN multiple quantum wells by MOCVD

“…To get the accurate peak positions Lorentzian lineshape function was used to fit the experimental spectrum. The peak at 3.471 eV was assigned to GaN barrier layer by comparing it with our previous PL studies on epitaxial GaN thin films [3,5]. In very high quality GaN epilayers grown by MOCVD free exciton A and B transitions were observed at 3.479 and 3.486 eV [3].…”

“…We have taken up a systematic investigation of GaN and other nitride semiconductors [3][4][5][6][7]. We have reported the very accurate bandgap of epitaxial GaN thin films, free exciton energies, exciton binding energies [3,4], energy levels of donors [5] and acceptors [6]. We also examined the exciton-phonon interactions and the conditions for room temperature lasing in this very important blue emitting material [7].…”