Growth of good quality InGaN multiple quantum wells by MOCVD

Viswanath, Annamraju Kasi; Lee, J.I.; Kim, S.T.; Kim, Dongho

doi:10.1016/j.jcrysgro.2003.08.076

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…In recent years, III-V nitrides (GaN, InN, and AlN) and their alloys have attracted much attention in optoelectronic-and electronic-device applications [1][2][3][4]. In particular, they are promising materials for the fabrication of efficient and longer wavelength light-emitting diodes (LEDs) with InGaN/GaN multiple quantum wells (MQWs) in the active region [5][6][7]. Nevertheless, compared with the previously reported blue LED with an external quantum efficiency of more than 80%, the light-emission efficiency of green or even longer wavelength InGaN-based LEDs remains low [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids

Peng

et al. 2021

Sci. China Technol. Sci.

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InGaN/GaN multiple quantum-well (MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO 2 stripe patterns along the [11][12][13][14][15][16][17][18][19][20] and [1-100] directions as a mask. The surface morphologies of both samples were investigated using scanning electron microscopy and demonstrated anisotropic growth characteristics of GaN. The optical characteristics were investigated using Raman spectra and photoluminescence (PL). The InGaN/GaN MQW structure grown on the GaN template with SiO 2 stripes along the [1-100] orientation exhibited less stress and higher PL intensity. Transmission electron microscopy results indicated that portions of MQWs were grown on an inclined semipolar plane, and air voids occurred only when the direction of the mask stripe was along the [1-100] orientation. The enhancement of the optical characteristic was due to the air-void structure and inclined semipolar quantum-well sidewalls.InGaN/GaN MQWs, SiO 2 mask stripes, optical characteristic, inclined quantum-well sidewall, air voids

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Section: Introductionmentioning

confidence: 99%

Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids

Peng

et al. 2021

Sci. China Technol. Sci.

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show abstract

“…Optoelectronic materials and devices based on InGaN multiple quantum wells (MQWs) have been developed across the blue and green wavelength range using metal-organic chemical vapor deposition (MOCVD) [1][2][3]. However, for longer wavelengths the efficiency of devices based on GaN grown in the commonly used c-direction is continuously decreasing with increasing indium content in the active region [4].…”

Section: Introductionmentioning

confidence: 99%