Optical properties of r.f. reactive sputtered tin-doped In2O3 films

Ohhata, Yutaka; Shinoki, Fujitoshi; Yoshida, Sadafumi

doi:10.1016/0040-6090(79)90298-0

Cited by 285 publications

(131 citation statements)

References 15 publications

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“…In broad agreement with these results, Pan and Ma [34,35] found pronounced features in electro-reflectance spectra of In 2 O 3 thin films prepared by thermal evaporation at 3.56 and 2.69 eV. Thresholds in photocurrent spectra have also found below 3 eV [36,37], and weak onsets below 3 eV have also been identified in a number of subsequent optical absorption experiments- [38,39] from 1979 and 1983 respectively provide some typical examples of these measurements. Pure bulk In 2 O 3 powder has a bright yellow colour and even in the absence of more sophisticated measurements it is very obvious that the bulk material absorbs significantly in the visible region.…”

Section: The Bulk Bandgapsupporting

confidence: 64%

“…Thus the effective mass at the bottom of the conduction band is calculated to be about 0.2m 0 [55], whereas measurements of plasmon energies give values around 0.35m 0 [41,42,97,107] for typical bulk doping level in the low to mid 10 20 cm −3 regime, with indications of an increase with increasing doping level [38]. Even higher values for m* in excess of 0.55m 0 reported in some earlier papers [108][109][110] now seem implausible.…”

Section: Bulk N-mentioning

confidence: 89%

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Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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This article reviews the impact of defects and doping on the surface electronic structure of indium oxide, a wide gap oxide semiconductor which under degenerate doping becomes an important transparent conducting material. Topics covered include recent evidence for carrier accumulation at In 2 O 3 surfaces when there is a low bulk doping level and the profound effects of doping on core and valence photoemission spectra. The importance of molecular beam epitaxy in growth of single crystal samples is emphasised. IntroductionTransparent conducting oxides (TCOs) combine the usually orthogonal properties of optical transparency in the visible region with a high electrical conductivity [1][2][3][4]. TCOs already find widespread application as the window electrode in display devices including liquid crystal displays and electroluminescent display devices. A TCO electrode is also an essential component in many designs of solar cell [5,6]. In addition there is a growing interest in "transparent electronics" where TCO materials are employed in a more active role, for example in light emitting diodes [7] or lasers operating in the ultraviolet regime. The TCO market is worth around $1.6 billion per annum, with upward of 80 % of this sum based on LCD displays. Indium oxide (In 2 O 3 ) is amenable to n-type doping with Sn to give a prototype TCO usually-but somewhat misleadingly-referred to as indium tin oxide or ITO. At present ITO dominates the TCO market as the material offers a better combination of conductivity and transparency than alternatives such as doped ZnO or SnO 2 . In principle, doped CdO could achieve better performance [8], but Cd is highly toxic. Despite some recent reports of respiratory disease and even deaths [9] among workers in the ITO industry, indium is generally regarded as relatively

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Section: The Bulk Bandgapsupporting

confidence: 64%

Section: Bulk N-mentioning

confidence: 89%

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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“…4, where the transmittance in the near infrared region increased for the films with the smaller carrier density. This correlation have been explained in terms of the shift of plasma frequency to longer wavelength side with the decrease in carrier density based on the Drude's theory [14,26]. Thus it could be concluded that the various ITO films with the very wide range in the electrical and optical properties were deposited systematically by the stable sputtering in the 'transition region'.…”

Section: Methodsmentioning

confidence: 95%

High rate deposition of tin-doped indium oxide films by reactive magnetron sputtering with unipolar pulsing and plasma emission feedback systems

Ohno

Kawaguchi

Miyamura

et al. 2006

Science and Technology of Advanced Materials

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Tin-doped indium oxide (ITO) films were deposited on the unheated alkali-free glass substrates (AN100) by reactive magnetron sputtering using an indium-tin alloy target with an unipolar pulsed power source feeding 50 kHz pulses and a plasma control unit (PCU) with a feed back system of oxygen plasma emission intensity at 777 nm. In order to achieve very high deposition rates, depositions were carried out in the 'transition region' between the metallic and the reactive (oxide) sputter modes where the target surface was metallic and oxidized, respectively. Stable depositions were successfully carried out in the whole 'transition region' with an aid of PCU. The lowest resistivity as the transparent ITO films deposited on unheated alkali-free glass was 7.5!10 K4 Ucm with the deposition rate of 650 nm/min. The electrical and optical properties of the films could be controlled systematically in the very wide range. q

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“…Therefore the electron mobility is mainly determined by In3+ ions in IGZO. The effective mass in the terminal oxide, In2O3, was estimated to be 0.3 me [10,11], while it is reasonably smaller in SnO2, 0.27 me by sub-millimeter measurements [12] and 0.23-0.30 by first-principles calculations [9].…”

Section: Mobilitymentioning

confidence: 99%