Abstract:Ab initio simulations were applied for nonpolar GaN/AlN superlattices of various widths for the first time giving band diagrams and optical transition oscillator strengths. The results confirmed the absence of electric fields in m-plane GaN/AlN multiquantum well (MQW) systems leading to drastically different properties of polar and nonpolar systems, narrow polar and nonpolar GaN/AlN well properties, such as bandgap or oscillator strength. Wider wells show drastic differences related to the presence of electric… Show more
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