Optical properties of plasma-enhanced chemical vapor deposited SiCxNy films by using silazane precursors

Chang, Wei-Yao; Chang, Chieh-Yu; Leu, Jihperng

doi:10.1016/j.tsf.2017.07.016

Cited by 16 publications

(14 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The silicon content remains at a relatively stable level of 22.7-26.4 at.% for all the samples, with a weak increasing tendency with increasing concentration of oxygen in the working gas. A similar result was reported by Chang et al [42], with a difference being a lack of reactive atmosphere. Both in their studies and in our work, the concentration of silicon in the films remains close to its content in the precursor compound.…”

Section: Elemental Composition and Chemical Structure Studies Conducted With The Help Of Xps Spectroscopysupporting

confidence: 89%

Thin SiNC/SiOC Coatings with a Gradient of Refractive Index Deposited from Organosilicon Precursor

et al. 2020

View full text Add to dashboard Cite

In this work, optical coatings with a gradient of the refractive index are described. Its aim was to deposit, using the RF PECVD method, films of variable composition (ranging from silicon carbon-oxide to silicon carbon-nitride) for a smooth change of their optical properties enabling a production of the filter with a refractive index gradient. For that purpose, two organosilicon compounds, namely tetramethyldisilazane and hexamethyldisilazane, were selected as precursor compounds. The results reveal better optical properties of the materials obtained from the latter source. Depending on whether deposited in pure oxygen atmosphere or under conditions of pure nitrogen, the refractive index of the coatings amounted to 1.65 and to 2.22, respectively. By using a variable composition N2/O2 gas mixture, coatings of intermediate magnitudes of “n” were acquired. The optical properties were investigated using both UV-Vis absorption spectroscopy and variable angle spectroscopic ellipsometry. The chemical structure of the coatings was studied with the help of Fourier transform infrared and X-ray photoelectron spectroscopies. Finally, atomic force microscopy was applied to examine their surface topography. As the last step, a “cold mirror” type interference filter with a gradient of refractive index was designed and manufactured.

show abstract

Section: Elemental Composition and Chemical Structure Studies Conducted With The Help Of Xps Spectroscopysupporting

confidence: 89%

Thin SiNC/SiOC Coatings with a Gradient of Refractive Index Deposited from Organosilicon Precursor

et al. 2020

View full text Add to dashboard Cite

show abstract

“…It is worth mentioning that the refractive index values reported for a‐SiCN films produced by (DP‐CVD) from TMDSN, [ 34 ] HMDSN, [ 34 ] methyltris(diethylamino)silane, [ 45 ] and divinyltetramethyldisilazane, [ 46 ] are: n = 2.1–2.3 [ 34 ] , n = 1.5–2.1 [ 45 ] ( T S = 200–400°C), and n = 1.5–1.9 [ 46 ] ( T S = 250–400°C), respectively.…”

Section: Optical Propertiesmentioning

confidence: 99%

Hard silicon carbonitride thin‐film coatings by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 2: Physical, optical, and mechanical properties of deposited films

Wróbel

Uznański

2021

Plasma Processes & Polymers

View full text Add to dashboard Cite

Physical, optical, and mechanical properties of silicon carbonitride (a‐SiCN) films produced by remote hydrogen plasma chemical vapor deposition (RP‐CVD) using aminosilane and disilazane precursors are examined in relation to their chemical structure. The films deposited at different temperatures (30–400°C) were characterized in terms of their density, refractive index, optical bandgap, photoluminescence, adhesion to a substrate, hardness, elastic modulus resistance to wear (predicted from the “plasticity index” values), and friction coefficient. Reasonable structural dependencies of film properties were determined using the relative integrated intensities of the infrared absorption bands from the Si−N and Si−C bonds, and the X‐ray photoelectron spectroscopy Si2p band from the Si−C bonds (controlled by substrate temperature) evaluated in the first part of this study. In view of their good mechanical properties, a‐SiCN films seem to be useful coatings for improving surface mechanics of engineering materials for advanced technology.

show abstract

“…11 Research about the integration of a porous low-k film and a dielectric barrier is limited. 12,13 The commonly used dielectric barriers are SiN, SiC, SiCN, SiCO, and SiCNO materials whose dielectric constant is larger than that of a porous low-k film, [9][10][11][12][13][14][15][16][17][18][19] increasing the parasitic capacitance of BEOL interconnects. Among these dielectric barriers, SiCN film is an attractive barrier because it provides relatively low dielectric constant, acceptable electrical properties, and better adhesion with Cu layer.…”

mentioning

confidence: 99%

Electrical Characteristics and Reliability of SiCN/Porous SiOCH Stacked Dielectric: Effects of Deposition Temperature of SiCN Film

Cheng

Lin

Peng

et al. 2021

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Silicon carbonitride (SiCN) films deposited using silazane singe-precursor with different temperatures were capped onto porous carbon-doped silicon oxide (p-SiOCH) dielectric films. Effects on the electrical and reliability characteristics of the fabricated SiCN/p-SiOCH stacked dielectrics were investigated. Experimental results indicated that increasing the deposition temperature of the SiCN film increased barrier capacity against Cu migration under thermal and electrical stress and time-dependence-dielectric-breakdown reliability for the SiCN/p-SiOCH stacked dielectric. Therefore, this study provides a promising processing to deposit a SiCN barrier by elevating the deposition temperature and using N-methyl-aza-2,2,4-trimethylsilacyclopentane singe-precursor, which can be applied to back-end-of-line interconnects for advanced technological nodes in the semiconductor industry. A larger capacitance, however, is the main issue due to a larger intrinsic dielectric constant of the SiCN film and stronger plasma-induced damage on the p-SiOCH film. As a result, the related actions will be taken in the future research to improve this issue.

show abstract

Optical properties of plasma-enhanced chemical vapor deposited SiCxNy films by using silazane precursors

Cited by 16 publications

References 49 publications

Thin SiNC/SiOC Coatings with a Gradient of Refractive Index Deposited from Organosilicon Precursor

Thin SiNC/SiOC Coatings with a Gradient of Refractive Index Deposited from Organosilicon Precursor

Hard silicon carbonitride thin‐film coatings by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 2: Physical, optical, and mechanical properties of deposited films

Electrical Characteristics and Reliability of SiCN/Porous SiOCH Stacked Dielectric: Effects of Deposition Temperature of SiCN Film

Contact Info

Product

Resources

About