1998
DOI: 10.1063/1.367466
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Optical properties of PbS

Abstract: Spectroscopic ellipsometry has been used to measure the complex dielectric function ε(E)=ε1(E)+iε2(E) of PbS single crystals. The measurements are made on cleaved PbS surfaces in the 1.5–5.3 eV photon-energy range at room temperature. It is found that the optical properties of PbS are very sensitive to air exposure. The observed ε(E) spectra reveal distinct structures at energies of the E1, E2, and E3 critical points (CPs). These data and the literature values are used for the modeling of the optical constants… Show more

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Cited by 78 publications
(38 citation statements)
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“…Equation 6 shows that it can strongly modify the absorption of a material when it is dispersed as small particles in a host with a different dielectric function (this is a consequence of dielectric confinement). 31,32 Using bulk values for the PbS dielectric function at 400 nm ( R ϭ 4.53, I ϭ 26.4) 33 and the tetrachloroethylene (C 2 Cl 4 ) refractive index (n s ϭ 1.53), 34 eq 6 yields a sizeindependent 400 ϭ 1.71 ϫ 10 5 cm Ϫ1 (Figure 5b, full line). Using the theoretical 400 , we find the following theoretical expression for the molar extinction coefficient: 400 ϭ 0.0234d 3 cm Ϫ1 / M. Clearly, both 400 and 400 are in excellent agreement with the experimental data.…”
Section: Resultsmentioning
confidence: 99%
“…Equation 6 shows that it can strongly modify the absorption of a material when it is dispersed as small particles in a host with a different dielectric function (this is a consequence of dielectric confinement). 31,32 Using bulk values for the PbS dielectric function at 400 nm ( R ϭ 4.53, I ϭ 26.4) 33 and the tetrachloroethylene (C 2 Cl 4 ) refractive index (n s ϭ 1.53), 34 eq 6 yields a sizeindependent 400 ϭ 1.71 ϫ 10 5 cm Ϫ1 (Figure 5b, full line). Using the theoretical 400 , we find the following theoretical expression for the molar extinction coefficient: 400 ϭ 0.0234d 3 cm Ϫ1 / M. Clearly, both 400 and 400 are in excellent agreement with the experimental data.…”
Section: Resultsmentioning
confidence: 99%
“…Lead sulphide (PbS) is an important IV-VI narrow direct band gap semiconductor material having approximate band gap of 0.41 eV at 300k and a large exciton Bohr radius of 18 nm [1,2].These properties make PbS very suitable for infrared detection application [3]. This material has also been used in many fields such as photography [4], Pb 2+ ionselective sensors [5], optical switches and solar absorption [6].…”
Section: Introductionmentioning
confidence: 99%
“…PbS is an important A 4 B 6 semiconductor material, with a bandgap of 0.42 eV at room temperature [1]. This corresponds to a threshold wavelength for photoconductivity of about 3000 nm, which makes the material very attractive for photoconductor detectors operating in the visible and near infrared range of the spectrum (400-3000 nm) [2,3].…”
Section: Introductionmentioning
confidence: 99%