1994
DOI: 10.1016/0040-6090(94)90890-7
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Optical properties of MnSe thin films

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Cited by 13 publications
(5 citation statements)
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“…[2] Solid solutions of manganese-doped ZnSe, for example, permit tuning of the coupled electronic, optical, and magnetic properties, [3] and MnSe is the x = 1 end member of the solid solution of the magnetic semiconductor Zn 1Àx Mn x Se. [4] MnSe is most stable in the octahedrally coordinated rocksalt (RS) structure type, [5] and a number of studies have focused on the synthesis and properties of this polymorph as bulk powders, [6] thin films, [7] and nanostructured solids. [8] The tetrahedrally coordinated non-equilibrium zincblende (ZB) and wurtzite (WZ) polymorphs are extremely rare, yet are of interest because of their direct structural compatibility with III/V, II/ VI, and related semiconductor systems.…”
mentioning
confidence: 99%
“…[2] Solid solutions of manganese-doped ZnSe, for example, permit tuning of the coupled electronic, optical, and magnetic properties, [3] and MnSe is the x = 1 end member of the solid solution of the magnetic semiconductor Zn 1Àx Mn x Se. [4] MnSe is most stable in the octahedrally coordinated rocksalt (RS) structure type, [5] and a number of studies have focused on the synthesis and properties of this polymorph as bulk powders, [6] thin films, [7] and nanostructured solids. [8] The tetrahedrally coordinated non-equilibrium zincblende (ZB) and wurtzite (WZ) polymorphs are extremely rare, yet are of interest because of their direct structural compatibility with III/V, II/ VI, and related semiconductor systems.…”
mentioning
confidence: 99%
“…a-MnSe films have been grown by molecular beam epitaxy (MBE) [5], metalorganic chemical vapor deposition (MOCVD) [6], and thermal evaporation [4,7], but no study has been reported on a-MnSe epilayers grown by hot-wall epitaxy (HWE). HWE is designed to maintain nearthermal equilibrium via the fabrication of a hot wall between the source and the substrate.…”
Section: Introductionmentioning
confidence: 99%
“…The band gap energy (E g ) of the bulk phase is ∼3.0 eV at room temperature. [4][5][6][7][8] A number of works mainly focused on their magnetic properties and reported that R-MnSe is antiferromagnetic with a N'eel temperature (T N ) ≈ 150 K. [8][9][10][11][12][13][14][15][16][17][18][19][20][21] The synthesis of R-MnSe quantum wires (diameter ) 3 nm) using mesoporous silica templates was reported by Chen et al 22 Recently, R-MnSe nanospheres/ nanorods have been synthesized using autoclave solvothermal/hydrothermal reactions. 23,24 Its microcrystal (e.g., flakes, cubes) forms were also synthesized using such autoclave reactions.…”
Section: Introductionmentioning
confidence: 99%
“…Like other manganese chalcogenides, rock-salt-structured α-MnSe is the stable form at room temperature. The band gap energy ( E g ) of the bulk phase is ∼3.0 eV at room temperature. A number of works mainly focused on their magnetic properties and reported that α-MnSe is antiferromagnetic with a N'eel temperature ( T N ) ≈ 150 K. …”
Section: Introductionmentioning
confidence: 99%