Optical properties of large band gap Se- and S-doped amorphous hydrogenated silicon

Mehra, R.M.; Baveja, J.; Purohit, L.P.; Kumar, Rajesh; Singh, Avneet; Mathur, P. C.; Taylor, P. C.

doi:10.1016/s0022-3093(00)00015-6

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…A metastable excess conductance, which can be enhanced by a brief light exposure up to several orders of magnitude compared to the initial dark conductivity, has been observed in compensated aSi:H films [34][35][36][37][38][39] as well as in doping modulated multilayers of aSi:H [35,38,[40][41][42][43]. This metastable excess conductance, called persistent ph (PPC), decays slowly over several days at room temperature and disappears by annealing near 100°C in multilayered films and 200°C in compensated films [24].…”

Section: Resultsmentioning

confidence: 98%

Effect of illumination on hydrogenated amorphous silicon thin films doped with chalcogens

Sharma

Kumar

Kang

et al. 2009

Journal of Non-Crystalline Solids

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Section: Resultsmentioning

confidence: 98%

Effect of illumination on hydrogenated amorphous silicon thin films doped with chalcogens

Sharma

Kumar

Kang

et al. 2009

Journal of Non-Crystalline Solids

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“…Bonding structure in the alloy was investigated using IR absorption spectra. The IR spectra revealed that the main effect of S and Se alloying is a strong increase in the strength of the mode at approximately 480 cm -1 , which corresponds to Si-S bond [18] and at about 390 cm -1 corresponding to Si-Se bond [19].…”

Section: Methodsmentioning

confidence: 99%

The Dependence of Optical Constants on Selenium and Sulphur-Doping in a-Si:H

Sharma¹,

Baveja²,

Mehra³

2002

phys. stat. sol. (a)

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Hydrogenated amorphous silicon–selenium and silicon–sulphur thin films were prepared by the decomposition of SiH4 and H2Se/H2S gas mixtures in an rf plasma glow discharge at a substrate temperature of 230 °C. Optical and electrical measurements show that increasing the selenium content above the gas ratio, H2Se/SiH4 = 10—3, results in an increase in the size of the optical (Tauc) gap and a decrease in the dark conductivity. The band gap of Se‐doped a‐Si:H was found to be between 1.79 and 1.89 eV as the gas ratio (H2Se/SiH4) increased from 10—4 to 10—1 and for S‐doped a‐Si:H lied between 1.80 and 1.96 eV as the gas ratio (H2S/SiH4) increased from 6.8 × 10—7 to 10—4. The refractive index n was calculated from transmission spectra and the value of n was found to decrease with increasing wavelength as well as doping concentration in the wavelength range of 650 to 950 nm. The Urbach energy and defect density were obtained from subgap absorption measurements.

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