Optical Properties of Indium Selenide Nanoflakes

Properties and potential applications of two-dimensional AlN

“…InSe is a semiconductor with a direct energy bandgap (E g =1.26 eV) at room temperature and the band gap can be further widened by having quantum confinement at reduced sample thickness [21,[34][35][36]. Layered InSe of three polytypes (,  and ) can be made by changing the stacking sequence of primitive layers [22,37].…”

Electrical and electronic properties of strained mono-layer InTe

“…The intrinsic electron mobility of 2D InSe up to 10 3 cm 2 /V.s and the high current I ON /I OF F ratio of 10 8 in InSe based FETs have been observed in experiments 18 . The 2D InSe and its family are promising candidate for future electronic nano-devices 13,19,20 .…”

Colloidal InSe nanostructures: Effect of morphology on their chemical sensitivity to methanol and formaldehyde fumes

“…They deduced that few layers gave good photo-response in their photodetectors producing a photo-responsivity of 34.7 mA/W and fast response time of 488 μs [7]. Sánchez-Royo et al also managed to tune the dimensionality of the lattice dynamics and electronic properties of atomically thin InSe flakes via gradual enhancement of quantum size confinement [15]. For our studies, we synthesized InSe nanostructures via the colloidal route to enable us to have control on the morphology and reduction in dimensionality.…”