2020
DOI: 10.1016/j.vacuum.2020.109231
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Properties and potential applications of two-dimensional AlN

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Cited by 40 publications
(22 citation statements)
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“…The VBM is positioned at the high symmetry K point whereas the CBM of the pristine AlN layer is at the point. This is also in line with the literature 62 , 63 . Moreover, the VBM of the free-standing AlN layer comes mainly from N p z orbital while the CBM is attributed to N s and Al s orbitals 63 .…”
Section: Resultssupporting
confidence: 93%
“…The VBM is positioned at the high symmetry K point whereas the CBM of the pristine AlN layer is at the point. This is also in line with the literature 62 , 63 . Moreover, the VBM of the free-standing AlN layer comes mainly from N p z orbital while the CBM is attributed to N s and Al s orbitals 63 .…”
Section: Resultssupporting
confidence: 93%
“…168 A review covering the applications of single-layer and few-layer sheets on different substrates is available. 169 The indirect band gap of monolayer h-GaN turns into a direct gap in few-layer h-GaN. 170 Furthermore, this wide-bandgap material is a candidate for the fabrication of energy-efficient deep-UV LEDs and it is suitable for biomedical applications and photovoltaics.…”
Section: Group Iii-v Monolayersmentioning
confidence: 99%
“…Two-dimensional (2D) metal dichalcogenides have been actively pursued in the gas-sensing field due to their large specific surface area and outstanding electrical properties. [8][9][10] Among the family of 2D metal dichalcogenides, tin diselenide (SnSe 2 ) has shown particular potential for NO 2 sensing due to its special affinity to NO 2 molecules. 11 Moreover, SnSe 2 exhibits chemical inertness toward H 2 O molecules, which is highly desired for gas sensors to work in humid atmospheres.…”
Section: Introductionmentioning
confidence: 99%