Optical properties evolution of GaN film grown via lateral epitaxial overgrowth

Zhao, Ying; Xu, Shengrui; Zhang, Jincheng; Zhang, Chunfu; Li, Peixian; Lin, Zhiyu; Zhang, Yachao; Zhou, Hong; Wang, Zhan; Peng, Ruoshi; Fan, Xiaomeng; Du, Jinjuan

doi:10.1016/j.apsusc.2020.145816

Cited by 18 publications

(16 citation statements)

References 29 publications

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“…The contrast of NBE and BL between the N-polar region and the protuberance structure may be a result of enhanced radiative recombination efficiencies in the N-polar region (more Si incorporated) and/or increased rates of non-radiative recombination in the protuberance structure/Ga-polar domain. 55 The electron depletion at the inversion domain boundary may play a role in decreasing the emission intensity at the protuberance structure as well. Nonetheless, the impact is limited to the protuberance structure area and does not extend to the surrounding areas, hence will not degrade the performance of devices whose functions are based on the sidewall facets.…”

Section: Resultsmentioning

confidence: 99%

Complications in silane-assisted GaN nanowire growth

et al. 2023

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Section: Resultsmentioning

confidence: 99%

Complications in silane-assisted GaN nanowire growth

et al. 2023

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“…Gallium nitride (GaN) is one of the attractive semiconductor materials attributed to its excellent physical and chemical properties. 1,2 Limited to the high cost of bulk GaN substrate, GaN is commonly grown on some foreign substrates like sapphire, Si, and SiC. 3 Various functional materials are used for the heteroepitaxy of GaN films in order to reduce the lattice and thermal mismatch between GaN and foreign substrates.…”

Section: Introductionmentioning

confidence: 99%

“…Gallium nitride (GaN) is one of the attractive semiconductor materials attributed to its excellent physical and chemical properties. , Limited to the high cost of bulk GaN substrate, GaN is commonly grown on some foreign substrates like sapphire, Si, and SiC . Various functional materials are used for the heteroepitaxy of GaN films in order to reduce the lattice and thermal mismatch between GaN and foreign substrates. − In recent years, langasite (La 3 Ga 5 SiO 14 , LGS) crystal has gained attention as a novel substrate for growing single-crystalline GaN films due to the small lattice mismatch (∼3.2%) and thermal expansion coefficient difference (∼7.5%) …”

Section: Introductionmentioning

confidence: 99%

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

Wang,

Xu,

Wang

et al. 2023

Crystal Growth & Design

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Langasite (La 3 Ga 5 SiO 14 , LGS) family crystals are known for their piezoelectric properties, which make them widely applicable in surface acoustic wave (SAW) devices. The group-III metal nitrides formed on LGS substrates are found to enable significant extension of SAW devices to higher-frequency ranges. However, the Ga element in LGS crystals is observed to volatilize in H 2 at high temperatures, forming Ga droplets and degrading the film quality. This study reports the growth of GaN films on the Ga-free LGS-type crystal Ca 3 NbAl 3 Si 2 O 14 (CNAS) by metal−organic chemical vapor deposition (MOCVD), and the CNAS is stable in MOCVD. The as-grown GaN films are continuous and smooth with a roughness of 0.369 nm. The epitaxial relationship between GaN and CNAS is GaN(0001)//CNAS(0001) and GaN(10−12)//CNAS(21−32). The mixed dislocations are found to be dominant type of dislocations of the GaN films on CNAS. The GaN films also exhibit good optical properties and a compressive stress of 0.17 GPa. Thus, the results indicate that the Ga-free LGS-type crystals have great potential for applications in the epitaxial growth of GaN materials.

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“…This technology did not attract much attention until it was successfully applied to InGaN-based blue laser diodes grown on ELOG sapphire substrates [ 9 ]. Researchers focused mainly on the quality [ 10 , 11 ] and adatom incorporation [ 12 , 13 , 14 ] of laterally grown material. A novel design of InGaN-based laser diodes grown on stripes of Si substrates shows great prospects [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

et al. 2022

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Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate.

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Optical properties evolution of GaN film grown via lateral epitaxial overgrowth

Cited by 18 publications

References 29 publications

Complications in silane-assisted GaN nanowire growth

Complications in silane-assisted GaN nanowire growth

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

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