Optical properties change in Sb40S40Se20 thin films by light-induced effect

Naik, Ramakanta; Parida, Sanjit Kumar; Kumar, Chandan; Ganesan, R.; Sangunni, K. S.

doi:10.1016/j.jallcom.2012.01.144

Cited by 32 publications

(5 citation statements)

References 31 publications

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“…where α 0 is a constant and E e corresponds to the Urbach energy (the width of the band tail of the localized states in the band gap) as discussed in [50]. Urbach energy E e has been considered as a useful parameter to evaluate the degree of structural disorder [51].…”

Section: Ftir Analysismentioning

confidence: 99%

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Naik¹,

Jena²,

Ganesan³

et al. 2015

Laser Phys.

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The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated from transmission spectra measured by FTIR spectroscopy. The material exhibits photo-bleaching (PB) when exposed to band gap light for a prolonged time in a vacuum. The PB is ascribed to structural changes inside the film as well as surface photo-oxidation. The amorphous nature of thin films was detected by x-ray diffraction. The chemical composition of the deposited thin films was examined by energy dispersive x-ray analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on an inverse synthesis method and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model. It was found that the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman and x-ray photoelectron spectra (XPS) were measured and decomposed into several peaks that correspond to the different structural units which support the optical changes.

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Section: Ftir Analysismentioning

confidence: 99%

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Naik¹,

Jena²,

Ganesan³

et al. 2015

Laser Phys.

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“…In contrast, the peaks in thermally annealed thin films exhibit minimal peak shift and maintain a high level of peak symmetry. 45,46 The thin films annealed at 1000 and 1100 °C in Figure 6 fit well using a simple Gaussian/Lorentzian GL (30) fit with no presence of peak shoulders for the oxygen and germanium core−shell energy states, describing the highly stoichiometric nature of h-GeO 2 in the annealed thin films. The atomic concentration percentage of these thin films obtained from XPS is specified in Table 1.…”

Section: Surface Chemistrymentioning

confidence: 75%

“…The presence of a nonstoichiometric amorphous GeOx phase leads to a noticeable rightward shift in the (lower) binding energy values of the Ge 3d and O 1s asymmetric peaks in as-deposited GeO2 thin films. In contrast, the peaks in thermally annealed thin films exhibit minimal peak shift and maintain a high level of peak symmetry. , …”

Section: Resultsmentioning

confidence: 97%

α-Quartz Phase Stabilization, Surface Texturing, and Tunable Optical Properties of Nanocrystalline GeO₂ Films Made by Pulsed-Laser Deposition: Implications for Optical and Optoelectronic Applications

Nalam,

Das,

Shutthanandan

et al. 2023

ACS Appl. Opt. Mater.

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Germanium oxide (GeO 2 ) has great potential in multifunctional devices and next-generation power electronics due to its high thermal conductivity and ambipolar doping capability. However, the complexity of synthesizing the desirable polymorph with a controlled phase, surface/interface quality, microstructure, and functional properties is the main barrier to GeO 2 utilization in advanced applications. In this regard, we present a method to realize hexagonal (h) or α-quartz type GeO 2 with a nanotextured surface morphology on sapphire substrates using a hybrid synthesis strategy that comprises pulsed laser deposition (PLD) and postdeposition thermal annealing. We performed a comprehensive study to investigate the effect of the annealing temperature, which was varied in a wide range (600−1100 °C), on the crystal structure, phase, surface morphology, chemical stoichiometry, defect states, and optical properties of PLD-grown GeO 2 films. Asdeposited GeO 2 films at 500 °C were amorphous. Upon annealing, the GeO 2 films induced an amorphous-to-crystalline phase transformation; GeO 2 films annealed at higher annealing temperatures (≥900 °C) stabilized in the hexagonal phase and demonstrated excellent crystal quality and chemical stability. The thermally activated growth process showed increased average crystallite size, which was varied in the range 20−130 (±2) nm, whereas the surface roughness followed a similar trend. The spectral transmittance and band gap also increased with an increasing annealing temperature. The resulting h-GeO 2 films, particularly those obtained at annealing temperatures in the 900−1100 °C range, had a higher band gap of 6.2−6.3 eV and displayed excellent optical transmittance in the visible region. Moreover, the absence of extended valence band maxima and reduced optical defect density support the quality improvement upon annealing. When considering phase-pure bulk and nanostructured GeO 2 as a possible candidate for ultrawide band gap semiconductors in cutting-edge technological applications, the results of the current work can be beneficial to realize high structural and optical quality α-quartz structured GeO 2 films.

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“…Recently, Ullah et al [156] have studied the light induced catalytic properties of CdSe-graphene nanocomposites synthesized by the facile hydrothermal method by taking methylene blue as standard dye and found photo-degradation of the dye under visible light. Naik et al [157] have studied the light-induced effect on the optical properties of Sb 40 S 40 Se 20 thin films prepared by thermal evaporation technique. They have observed the decrease in the optical band gap due to the change in localized states near to the band edges and shift in the binding energy of different core levels due to formation of more homo-polar bonds which supports the decrease in the optical band gap.…”

Section: Optical Induced Changesmentioning

confidence: 99%

Radiation Induced Effects on Properties of Semiconducting Nanomaterials

Tripathi

Kaur

Ridhi

et al. 2015

SSP

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The irradiation of nanomaterials with energetic particles has significant effects on the properties of target materials. In addition to the well-known detrimental effects of irradiations, they have also some beneficial effects on the properties of nanomaterials. Irradiation effect can change the morphology of the materials in a controlled manner and tailor their mechanical, structural, optical and electrical properties. Irradiation induced modifications in the properties of nanomaterials can be exploited for many useful applications. With the aim of getting better performance of electronic devices, it is necessary to discuss the irradiation induced changes in the nanomaterials. In order to improve the irradiation hardness of electronic components, it is also crucial to have a fundamental understanding of the impact of the irradiation on the defect states and transport properties of the host material. In the present article, we review some recent advances on the irradiation induced effects on the properties of semiconducting nanomaterials. We have reviewed the effect of different types of irradiations which includes γ-irradiation, electron beam irradiation, laser irradiation, swift heavy ion irradiations, thermal induced, and optical induced irradiations, etc. on the various properties of semiconducting nanomaterials. In addition, the irradiation induced defects are also discussed.

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Optical properties change in Sb40S40Se20 thin films by light-induced effect

Cited by 32 publications

References 31 publications

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

α-Quartz Phase Stabilization, Surface Texturing, and Tunable Optical Properties of Nanocrystalline GeO₂ Films Made by Pulsed-Laser Deposition: Implications for Optical and Optoelectronic Applications

Radiation Induced Effects on Properties of Semiconducting Nanomaterials

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Optical properties change in Sb40S40Se20 thin films by light-induced effect

Cited by 32 publications

References 31 publications

Photo-induced optical bleaching in Ge12Sb25S63amorphous chalcogenide thin films: effect of 532 nm laser illumination

Photo-induced optical bleaching in Ge12Sb25S63amorphous chalcogenide thin films: effect of 532 nm laser illumination

α-Quartz Phase Stabilization, Surface Texturing, and Tunable Optical Properties of Nanocrystalline GeO2 Films Made by Pulsed-Laser Deposition: Implications for Optical and Optoelectronic Applications

Radiation Induced Effects on Properties of Semiconducting Nanomaterials

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Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

Photo-induced optical bleaching in Ge₁₂Sb₂₅S₆₃amorphous chalcogenide thin films: effect of 532 nm laser illumination

α-Quartz Phase Stabilization, Surface Texturing, and Tunable Optical Properties of Nanocrystalline GeO₂ Films Made by Pulsed-Laser Deposition: Implications for Optical and Optoelectronic Applications