Optical properties and structure of most stable subnanometer (ZnAs2)n clusters

Yeshchenko, Oleg A.; Dmitruk, І.; Koryakov, S.V.; Galak, M.P.; Pundyk, Iryna; Hohlova, L.M.

doi:10.1016/j.physb.2005.06.030

Cited by 5 publications

(2 citation statements)

References 24 publications

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“…Kouklin et al [5] reported the formation of Zn 3 As 2 single crystal platelets by direct self catalytic vapour-liquid-solid (VLS) growth mechanism by chemical vapour deposition (CVD) process. Yeschenko et al [6] reported (ZnAs 2 ) n nanoclusters fabrication by laser ablation and their absorption and photoluminescence (PL) properties have been studied in detail. Scriven et al [7] investigated the growth of Zn 3 As 2 epitaxial layers on InP by atmospheric pressure metal-organic vapour phase epitaxy (MOVPE).…”

Section: Introductionmentioning

confidence: 99%

Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization

Nagarajan¹,

Sudhakar²,

Lourdudoss³

et al. 2011

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization

Nagarajan¹,

Sudhakar²,

Lourdudoss³

et al. 2011

Journal of Crystal Growth

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“…Botha et al have extensively studied the optical properties of Zn 3 As 2 epitaxial layers grown by metal-organic vapour phase epitaxy (MOVPE) [4]. (ZnAs 2 ) n nanoclusters were fabricated by the laser ablation technique and their absorption and photoluminescence (PL) properties were studied in detail [5]. Chemical vapour deposition (CVD) processes were also employed for the formation of Zn 3 As 2 single crystal platelets by the direct selfcatalytic vapour-liquid-solid (VLS) growth mechanism [6].…”

Section: Introductionmentioning

confidence: 99%

Liquid phase epitaxial growth of II–V semiconductor compound Zn₃As₂

Sudhakar¹,

Ganesh²,

Sulania³

et al. 2007

J. Phys. D: Appl. Phys.

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We report the liquid phase epitaxial growth of Zn3As2 on InAs (1 1 0) substrates using 100% In solvent. The zinc concentration in the layers was varied by changing the zinc mole fraction in the growth melt from 3 × 10−3 to 15 × 10−3, keeping all other growth parameters constant. Layers grown with 3 × 10−3, 5 × 10−3 and 8 × 10−3 mole fractions of zinc seem to be polycrystalline, while layers grown with more than 8 × 10−3 mole fraction of zinc resulted in highly oriented and single crystalline material. Composition of the epilayers was confirmed by energy dispersive x-ray microanalysis. Scanning electron microscopy was used to determine the thickness of the epilayers and the growth rate was calculated. Furthermore it was found that a linear dependence exists between the growth rate and the zinc mole fraction in the growth melt. Atomic force microscopy results reveal that the smoothness of the epilayers improve when the zinc concentration in the epilayer approaches the stoichiometric value of Zn3 As2. Room temperature Hall measurements showed that the grown epilayers were unintentionally doped p-type with an increase in the carrier mobility and a decrease in the carrier concentration with respect to the increase in the zinc mole fraction in the growth melt.

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Nanocomposite Materials: Semiconductors in Zeolites

Goldbach

Saboungi

2005

Encyclopedia of Inorganic Chemistry

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Encapsulation in zeolites holds considerable promise for organizing semiconductor quantum dots and quantum wires into ordered two‐ and three‐dimensional arrays that can be used in a variety of applications. While the use of such materials has been limited until now by a number of practical difficulties, considerable progress has been made in the last few years in surmounting these obstacles. This article reviews recent progress in the field, particularly with regard to stabilization of the nanocomposites against moisture, modulation of their properties by appropriate cation substitution, and preparation of materials in the form of thin films that can exhibit strong nonlinear optical activity. Finally, the article discusses the present perspectives for the field and outlines some research directions that must be pursued for these materials to achieve their full range of potential applications.

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Optical properties and structure of most stable subnanometer (ZnAs2)n clusters

Cited by 5 publications

References 24 publications

Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization

Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization

Liquid phase epitaxial growth of II–V semiconductor compound Zn₃As₂

Nanocomposite Materials: Semiconductors in Zeolites

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Optical properties and structure of most stable subnanometer (ZnAs2)n clusters

Cited by 5 publications

References 24 publications

Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization

Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization

Liquid phase epitaxial growth of II–V semiconductor compound Zn3As2

Nanocomposite Materials: Semiconductors in Zeolites

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Liquid phase epitaxial growth of II–V semiconductor compound Zn₃As₂